18231750. PHASE CHANGE RANDOM ACCESS MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
PHASE CHANGE RANDOM ACCESS MEMORY DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chun-Hsu Yen of Hsinchu City (TW)
Yu-Chuan Hsu of Hsinchu City (TW)
Chen-Hui Yang of Hsinchu City (TW)
PHASE CHANGE RANDOM ACCESS MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18231750 titled 'PHASE CHANGE RANDOM ACCESS MEMORY DEVICE
Simplified Explanation
The abstract describes a method for making a memory device. Here is a simplified explanation of the abstract:
- A first dielectric layer is formed over a bottom electrode.
- A first void is formed through the first dielectric layer, exposing a portion of the upper boundary of the bottom electrode.
- A first conductive structure is formed along the sidewalls of the first void and the exposed portion of the upper boundary of the bottom electrode.
- The first void is filled with the first dielectric layer.
- A phase change material layer is formed over the first dielectric layer, causing it to contact at least a portion of a sidewall of the first conductive structure.
Potential applications of this technology:
- Memory devices: The method described can be used to create memory devices that utilize phase change materials for data storage.
Problems solved by this technology:
- Improved memory performance: The use of phase change materials in memory devices can provide faster read and write speeds compared to traditional memory technologies.
Benefits of this technology:
- Increased data storage density: The method allows for the creation of memory devices with higher storage capacities due to the use of phase change materials.
- Enhanced memory performance: The use of phase change materials can result in faster and more reliable memory operations.
- Compatibility with existing technology: The method can be integrated into existing manufacturing processes for memory devices.
Original Abstract Submitted
A method for making a memory device, includes: forming a first dielectric layer over a bottom electrode; forming a first void extending through the first dielectric layer to expose a portion of an upper boundary of the bottom electrode; forming a first conductive structure lining along respective sidewalls of the first void and the exposed portion of the upper boundary of the bottom electrode; filling the first void with the first dielectric layer; and forming a phase change material layer over the first dielectric layer to cause the phase change material layer to contact at least a portion of a sidewall of the first conductive structure.