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Category:H01L21/822
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Pages in category "H01L21/822"
The following 42 pages are in this category, out of 42 total.
1
- 17522974. GATE-CUT AND SEPARATION TECHNIQUES FOR ENABLING INDEPENDENT GATE CONTROL OF STACKED TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17543215. COMPLEMENTARY FIELD EFFECT TRANSISTORS HAVING MULTIPLE VOLTAGE THRESHOLDS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17590863. METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17806292. STACKED FIELD EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808568. CONTACTS FOR STACKED FIELD EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17838384. THREE-DIMENSIONAL SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17838646. SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 17936416. VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract (International Business Machines Corporation)
- 17936843. ANTI-FUSE AND FUSE STRUCTURES USING ANISOTROPIC ETCHING OF THE SUBSTRATE USING A PATTERN OF ETCH RELEASE HOLES FOR IMPROVING THE FUNCTIONALITY OF QUBIT CIRCUITS simplified abstract (International Business Machines Corporation)
- 17945422. MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract (International Business Machines Corporation)
- 18047954. OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 18151279. Dielectric Walls for Complementary Field Effect Transistors simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18173847. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18196191. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18298678. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18306004. VERTICALLY STACKED TRANSISTORS AND FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18373098. SHIFTED MULTI-VIA CONNECTION FOR HYBRID BONDING simplified abstract (Tokyo Electron Limited)
- 18499258. DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS simplified abstract (Samsung Electronics Co., Ltd.)
- 18534217. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
B
I
- International business machines corporation (20240096887). MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract
- International business machines corporation (20240112056). ANTI-FUSE AND FUSE STRUCTURES USING ANISOTROPIC ETCHING OF THE SUBSTRATE USING A PATTERN OF ETCH RELEASE HOLES FOR IMPROVING THE FUNCTIONALITY OF QUBIT CIRCUITS simplified abstract
- International business machines corporation (20240113117). VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract
- International Business Machines Corporation patent applications on April 4th, 2024
- International Business Machines Corporation patent applications on February 29th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
Q
S
- Samsung electronics co., ltd. (20240096879). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096889). INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240105724). THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
T
U
- US Patent Application 17815623. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 18361722. INTEGRATED CIRCUIT IN HYBRID ROW HEIGHT STRUCTURE simplified abstract
- US Patent Application 18362685. Memory Array Staircase Structure simplified abstract
- US Patent Application 18446176. REDUCING CROSS-WAFER VARIABILITY FOR MINIMUM WIDTH RESISTORS simplified abstract