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Category:H10B51/10
Subcategories
This category has the following 37 subcategories, out of 37 total.
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Pages in category "H10B51/10"
The following 141 pages are in this category, out of 141 total.
1
- 18149734. VERTICALLY STACKED FeFETS WITH COMMON CHANNEL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18151682. THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVICES AND METHODS OF FORMING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18155688. THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18171858. THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18208943. FERROELECTRIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18217730. NON-VOLATILE MEMORY DEVICE AND SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18222278. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18235000. THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18243726. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18320816. SEMICONDUCTOR MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18351407. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18362196. 3D MEMORY MULTI-STACK CONNECTION METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18406745. THREE-DIMENSIONAL MEMORY DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18436574. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18457907. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18459962. NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract (Kioxia Corporation)
- 18501137. THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18501360. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18510464. MEMORY STRUCTURES WITH VOIDS simplified abstract (Micron Technology, Inc.)
- 18510975. GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18511461. FERROELECTRIC MEMORY CELL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18526663. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18583121. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18589281. FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18593959. THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18602041. METHOD FOR FABRICATING MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18602067. MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18605714. BACK-END ACTIVE DEVICE AND LOGIC GATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18608149. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18609404. TRI-GATE TRANSISTOR AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 18612011. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18638140. THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVICES AND METHODS OF FORMING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18678963. SEMICONDUCTOR DIES INCLUDING LOW AND HIGH WORKFUNCTION SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18751331. METHOD OF FORMING MEMORY DEVICE INCLUDING CONDUCTIVE PILLARS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18884849. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18913129. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME (Samsung Electronics Co., Ltd.)
- 18941445. Memory Device and Method of Forming Thereof (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18956837. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18959781. 3D FERROELECTRIC MEMORY (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18985411. MEMORY ARRAY SOURCE/DRAIN ELECTRODE STRUCTURES (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 19004422. METHOD OF FORMING SEMICONDUCTOR STRUCTURE (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19008686. SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 19018073. Memory Arrays Comprising Vertically-Alternating Tiers Of Insulative Material And Memory Cells And Methods Of Forming A Memory Array Comprising Memory Cells Individually Comprising A Transistor And A Capacitor (Micron Technology, Inc.)
H
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K
- Kioxia corporation (20240096389). NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract
- Kioxia corporation (20250095692). SEMICONDUCTOR MEMORY DEVICE
- Kioxia Corporation patent applications on March 20th, 2025
- Kioxia Corporation patent applications on March 21st, 2024
M
- Micron technology, inc. (20240164113). MEMORY STRUCTURES WITH VOIDS simplified abstract
- Micron technology, inc. (20240188302). MEMORY DEVICE INCLUDING TIERS OF FeFET MEMORY CELLS AND VERTICAL CONTROL GATES simplified abstract
- Micron technology, inc. (20240292630). MEMORY DEVICES HAVING ADJACENT MEMORY CELLS WITH MITIGATED DISTURB RISK simplified abstract
- Micron technology, inc. (20250151284). Memory Arrays Comprising Vertically-Alternating Tiers Of Insulative Material And Memory Cells And Methods Of Forming A Memory Array Comprising Memory Cells Individually Comprising A Transistor And A Capacitor
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on June 6th, 2024
- Micron Technology, Inc. patent applications on May 16th, 2024
- Micron Technology, Inc. patent applications on May 8th, 2025
- Micron Technology, Inc. patent applications on September 5th, 2024
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- Samsung electronics co., ltd. (20240107773). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240164108). THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES simplified abstract
- Samsung electronics co., ltd. (20240244847). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240257856). SEMICONDUCTOR DEVICE
- Samsung electronics co., ltd. (20240257856). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240266287). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240324237). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240324239). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240357831). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240414925). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Samsung electronics co., ltd. (20250063731). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- Samsung electronics co., ltd. (20250071991). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- Samsung electronics co., ltd. (20250081469). VERTICAL SEMICONDUCTOR DEVICE
- Samsung electronics co., ltd. (20250126875). SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME
- Samsung Electronics Co., Ltd. patent applications on April 17th, 2025
- Samsung Electronics Co., Ltd. patent applications on August 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on August 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on December 12th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 12th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on February 20th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 20th, 2025
- Samsung Electronics Co., Ltd. patent applications on February 27th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 27th, 2025
- Samsung Electronics Co., Ltd. patent applications on February 6th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 30th, 2025
- Samsung Electronics Co., Ltd. patent applications on July 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 6th, 2025
- Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 24th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 26th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240164109). THREE-DIMENSIONAL MEMORY DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240224538). BACK-END ACTIVE DEVICE AND LOGIC GATE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240251564). THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240315042). SEMICONDUCTOR DIES INCLUDING LOW AND HIGH WORKFUNCTION SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20250089263). SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Taiwan semiconductor manufacturing co., ltd. (20250089264). 3D FERROELECTRIC MEMORY
- Taiwan semiconductor manufacturing co., ltd. (20250120091). MEMORY ARRAY SOURCE/DRAIN ELECTRODE STRUCTURES
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 10th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 4th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 13th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on May 16th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. patent applications on September 19th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240121965). VERTICALLY STACKED FeFETS WITH COMMON CHANNEL simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240215254). MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240215255). METHOD FOR FABRICATING MEMORY DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240268122). THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVICES AND METHODS OF FORMING simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240349508). METHOD OF FORMING MEMORY DEVICE INCLUDING CONDUCTIVE PILLARS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381652). THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381653). MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381656). THREE-DIMENSIONAL MEMORY DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381657). THREE-DIMENSIONAL MEMORY DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240414923). SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Taiwan semiconductor manufacturing company, ltd. (20250008738). METHOD OF FORMING MEMORY DEVICE
- Taiwan semiconductor manufacturing company, ltd. (20250063736). THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS
- Taiwan semiconductor manufacturing company, ltd. (20250072002). Memory Device and Method of Forming Thereof
- Taiwan semiconductor manufacturing company, ltd. (20250142832). METHOD OF FORMING SEMICONDUCTOR STRUCTURE
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 11th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 8th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on December 12th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 20th, 2025
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 27th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 6th, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 23rd, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on January 2nd, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on June 27th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 1st, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on October 17th, 2024