Category:Bo-Feng Young of Taipei (TW)
Bo-Feng Young
Bo-Feng Young from Taipei (TW) has applied for patents in technology areas such as H10B51/20, H01L29/786, H10B51/10 with taiwan semiconductor manufacturing company, ltd..
Patents
Pages in category "Bo-Feng Young of Taipei (TW)"
The following 16 pages are in this category, out of 16 total.
1
- 18151682. THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVICES AND METHODS OF FORMING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18364616. EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18516908. INTEGRATED CIRCUIT INCLUDING THREE-DIMENSIONAL MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18638140. THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVICES AND METHODS OF FORMING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18669052. AIR GAP IN INNER SPACERS AND METHODS OF FABRICATING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18677952. FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18941445. Memory Device and Method of Forming Thereof (Taiwan Semiconductor Manufacturing Company, LTD.)
T
- Taiwan semiconductor manufacturing co., ltd. (20240186414). FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240313082). AIR GAP IN INNER SPACERS AND METHODS OF FABRICATING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240206185). FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240268122). THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVICES AND METHODS OF FORMING simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240324235). FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381654). FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250072002). Memory Device and Method of Forming Thereof