Samsung electronics co., ltd. (20240164108). THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES simplified abstract

THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES

Organization Name

samsung electronics co., ltd.

Inventor(s)

Kyunghwan Lee of Suwon-si (KR)

Yongseok Kim of Suwon-si (KR)

Daewon Ha of Suwon-si (KR)

THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240164108 titled 'THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES

Simplified Explanation

The abstract describes a three-dimensional ferroelectric memory device with various components stacked on a substrate, including a channel, gate insulation pattern, conductive pattern, ferroelectric pattern, gate electrode, and source/drain patterns.

• Channel on a substrate extending vertically
• Gate insulation pattern and conductive pattern surrounding the channel horizontally
• Ferroelectric pattern contacting the conductive pattern
• Gate electrode contacting the ferroelectric pattern
• Source/drain patterns contacting the channel surfaces

Potential Applications

This technology could be applied in:

• Non-volatile memory devices
• High-density data storage systems
• Embedded memory in integrated circuits

Problems Solved

This technology addresses:

• Data retention issues in memory devices
• High power consumption in traditional memory systems
• Limited scalability of memory technologies

Benefits

The benefits of this technology include:

• Improved data retention and reliability
• Lower power consumption
• Increased scalability for future memory requirements

Potential Commercial Applications

This technology has potential commercial applications in:

• Consumer electronics
• Automotive electronics
• Aerospace and defense industries

Possible Prior Art

One possible prior art for this technology is the use of ferroelectric materials in memory devices, which has been explored in various research studies and patents.

Unanswered Questions

1. How does the performance of this three-dimensional ferroelectric memory device compare to traditional memory technologies in terms of speed and endurance? 2. Are there any specific challenges in manufacturing and scaling up production of these devices for commercial applications?

Original Abstract Submitted

a three-dimensional ferroelectric memory device includes a channel on a substrate and extending in a vertical direction substantially perpendicular to an upper surface of the substrate, a gate insulation pattern and a conductive pattern stacked on and surrounding a sidewall of the channel in a horizontal direction substantially parallel to the upper surface of the substrate, a ferroelectric pattern contacting a portion of an outer sidewall of the conductive pattern, a gate electrode contacting the ferroelectric pattern, and first and second source/drain patterns contacting lower and upper surfaces, respectively, of the channel.