Taiwan semiconductor manufacturing company, ltd. (20250008738). METHOD OF FORMING MEMORY DEVICE

METHOD OF FORMING MEMORY DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chieh-Fang Chen of Hsinchu County TW

Feng-Cheng Yang of Hsinchu County TW

Chung-Te Lin of Tainan City TW

METHOD OF FORMING MEMORY DEVICE

This abstract first appeared for US patent application 20250008738 titled 'METHOD OF FORMING MEMORY DEVICE

Original Abstract Submitted

a memory device includes a plurality of first conductive pillars, a plurality of second conductive pillars, a plurality of gap filling pillars, a channel layer and first dielectric pillars. the gap filling pillars are located in between the first conductive pillars and the second conductive pillars. the channel layer is extending in a first direction, and located on side surfaces of the first conductive pillars and the second conductive pillars. the first dielectric pillars are located in between the channel layer and the plurality of gap filling pillars, wherein a length of an interface where the first dielectric pillars contact the gap filling pillars along the first direction is different from a length of the gap filling pillars along the first direction.