18985411. MEMORY ARRAY SOURCE/DRAIN ELECTRODE STRUCTURES (Taiwan Semiconductor Manufacturing Co., Ltd.)
MEMORY ARRAY SOURCE/DRAIN ELECTRODE STRUCTURES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Kuo-Chang Chiang of Hsinchu TW
Hung-Chang Sun of Kaohsiung TW
MEMORY ARRAY SOURCE/DRAIN ELECTRODE STRUCTURES
This abstract first appeared for US patent application 18985411 titled 'MEMORY ARRAY SOURCE/DRAIN ELECTRODE STRUCTURES
Original Abstract Submitted
A memory cell includes a thin film transistor over a semiconductor substrate, the thin film transistor including: a memory film contacting a word line; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the memory film is disposed between the OS layer and the word line, wherein the source line and the bit line each comprise a first conductive material touching the OS layer, and wherein the first conductive material has a work function less than 4.6. The memory cell further includes a dielectric material separating the source line and the bit line.