Taiwan semiconductor manufacturing company, ltd. (20250063736). THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS
THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Sheng-Chen Wang of Hsinchu (TW)
THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS
This abstract first appeared for US patent application 20250063736 titled 'THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS
Original Abstract Submitted
in an embodiment, a device includes: a first word line over a substrate, the first word line including a first conductive material; a first bit line intersecting the first word line; a first memory film between the first bit line and the first word line; and a first conductive spacer between the first memory film and the first word line, the first conductive spacer including a second conductive material, the second conductive material having a different work function than the first conductive material, the first conductive material having a lower resistivity than the second conductive material.