Taiwan semiconductor manufacturing co., ltd. (20250120091). MEMORY ARRAY SOURCE/DRAIN ELECTRODE STRUCTURES
MEMORY ARRAY SOURCE/DRAIN ELECTRODE STRUCTURES
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Kuo-Chang Chiang of Hsinchu TW
Hung-Chang Sun of Kaohsiung TW
MEMORY ARRAY SOURCE/DRAIN ELECTRODE STRUCTURES
This abstract first appeared for US patent application 20250120091 titled 'MEMORY ARRAY SOURCE/DRAIN ELECTRODE STRUCTURES
Original Abstract Submitted
a memory cell includes a thin film transistor over a semiconductor substrate, the thin film transistor including: a memory film contacting a word line; and an oxide semiconductor (os) layer contacting a source line and a bit line, wherein the memory film is disposed between the os layer and the word line, wherein the source line and the bit line each comprise a first conductive material touching the os layer, and wherein the first conductive material has a work function less than 4.6. the memory cell further includes a dielectric material separating the source line and the bit line.