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Category:G11C16/30
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This category has the following 49 subcategories, out of 49 total.
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Pages in category "G11C16/30"
The following 194 pages are in this category, out of 194 total.
1
- 17693571. NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING WORDLINE DEFECT OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17742874. NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17831266. CELL VOLTAGE DROP COMPENSATION CIRCUIT simplified abstract (Micron Technology, Inc.)
- 17852103. Detection and Isolation of Faulty Holdup Capacitors Using Hardware Circuit in Data Storage Devices simplified abstract (Western Digital Technologies, Inc.)
- 17874100. Non-Volatile Memory Power Cycle Protection Mechanism simplified abstract (Apple Inc.)
- 17881039. MEMORY DEVICE INCLUDING VERTICAL CHANNEL STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 17954757. CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY simplified abstract (Western Digital Technologies, Inc.)
- 17958386. NONVOLATILE MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18050489. POWER SWITCH CIRCUIT AND NON-VOLATILE MEMORY DEVICE COMPRISING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18058555. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18067224. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND READ METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18079433. OPERATION METHOD OF NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18109338. MEMORY MODULES INCLUDING A MIRRORING CIRCUIT AND METHODS OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18217087. CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18223358. GENERATION OF QUICK PASS WRITE BIASES IN A MEMORY DEVICE simplified abstract (WESTERN DIGITAL TECHNOLOGIES, INC.)
- 18229249. SCHEDULED INTERRUPTS FOR PEAK POWER MANAGEMENT TOKEN RING COMMUNICATION simplified abstract (Micron Technology, Inc.)
- 18230371. CHANNEL PRE-CHARGE PROCESS FOR MEMORY DEVICES (Western Digital Technologies, Inc.)
- 18237787. Threshold Voltage Reduction in Memristive Devices (International Business Machines Corporation)
- 18239480. NONVOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18323306. MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18366368. FLASH MEMORY FOR ADJUSTING TRIP VOLTAGE USING VOLTAGE REGULATOR AND SAMPLING SWITCH CIRCUIT AND SENSING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18375048. APPARATUS WITH VOLTAGE PROTECTION MECHANISM simplified abstract (Micron Technology, Inc.)
- 18382325. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME AND OPERATING METHOD OF NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18384927. SERIAL INTERFACE RECEIVER AND AN OFFSET CALIBRATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18402647. METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18404742. ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18405049. ELONGATED CAPACITORS IN 3D NAND MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18408680. SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18424043. OPERATION METHOD OF MEMORY SYSTEM, DATA READ METHOD OF MEMORY AND MEMORY SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18430288. MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18442040. CURRENT BIAS CIRCUIT, MEMORY DEVICE AND MEMORY SYSTEM (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18455575. MEMORY SYSTEM HAVING A NON-VOLATILE MEMORY AND A CONTROLLER CONFIGURED TO SWITCH A MODE FOR CONTROLLING AN ACCESS OPERATION TO THE NON-VOLATILE MEMORY simplified abstract (Kioxia Corporation)
- 18460030. DATA LATCH CIRCUIT, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18460496. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18465541. METHOD OF OPERATING MEMORY DEVICE AND MEMORY DEVICE PERFORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18467047. MANAGING POWER SUPPLY IN SEMICONDUCTOR DEVICES (MACRONIX INTERNATIONAL CO., LTD.)
- 18468345. NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING THE NONVOLATILE MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18489454. VOLTAGE REGULATOR SUPPLY FOR INDEPENDENT WORDLINE READS simplified abstract (Micron Technology, Inc.)
- 18518651. METHOD AND CIRCUIT FOR PROVIDING AUXILIARY POWER AND STORAGE DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18541839. CLOCK SIGNAL GENERATOR AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18545888. ENHANCED GRADIENT SEEDING SCHEME DURING A PROGRAM OPERATION IN A MEMORY SUB-SYSTEM simplified abstract (Micron Technology, Inc.)
- 18581018. NONVOLATILE MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18583066. POWER MANAGEMENT simplified abstract (Micron Technology, Inc.)
- 18586134. METHOD AND SYSTEM FOR ACCESSING MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18589263. STORAGE CONTROLLER, STORAGE DEVICE INCLUDING THE SAME, AND OPERATION METHOD OF STORAGE CONTROLLER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18595909. MEMORY DEVICE AND OPERATION THEREOF simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18596742. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18601681. MEMORY DEVICE AND METHOD OF OPERATING THE SAME (SK hynix Inc.)
- 18601810. STORING ONE DATA VALUE BY PROGRAMMING A FIRST MEMORY CELL AND A SECOND MEMORY CELL simplified abstract (Micron Technology, Inc.)
- 18602709. MEMORY DEVICE INCLUDING CHARGE PUMP, AND OPERATION METHOD OF THE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18604192. TECHNIQUES FOR PARALLEL MEMORY CELL ACCESS simplified abstract (Micron Technology, Inc.)
- 18604858. MULTI-PROGRAM OF MEMORY CELLS WITHOUT INTERVENING ERASE OPERATIONS simplified abstract (MICRON TECHNOLOGY, INC.)
- 18607850. NON -VOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF (SAMSUNG ELECTRONICS CO., LTD.)
- 18612239. NONVOLATILE SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18615790. MEMORY DEVICE GENERATING VOLTAGE RESPONSIVE TO TEMPERATURE AND METHOD OF OPERATING THE SAME (SK hynix Inc.)
- 18624312. MEMORY CARD WITH MULTIPLE MODES, AND HOST DEVICE CORRESPONDING TO THE MEMORY CARD simplified abstract (Kioxia Corporation)
- 18631706. VERTICAL MEMORY DEVICES AND METHODS FOR OPERATING THE SAME simplified abstract (Yangtze Memory Technologies Co., LTD.)
- 18636569. MEMORY DEVICE AND PROGRAM OPERATION THEREOF simplified abstract (Yangtze Memory Technologies Co., LTD.)
- 18637829. MEMORY DEVICES HAVING BUILT-IN POWER SUPPORTING CONTROL CIRCUITS THAT PROVIDE INCREASED PROGRAM AND READ RELIABILITY (Samsung Electronics Co., Ltd.)
- 18649582. HYBRID PARALLEL PROGRAMMING OF SINGLE-LEVEL CELL MEMORY simplified abstract (Micron Technology, Inc.)
- 18657672. READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION simplified abstract (Micron Technology, Inc.)
- 18670778. MEMORY MODULES INCLUDING A MIRRORING CIRCUIT AND METHODS OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18745610. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18818527. SEMICONDUCTOR STORAGE DEVICE (Kioxia Corporation)
- 18819725. Low Power State Implementation in a Power Management Circuit (Lodestar Licensing Group LLC)
- 18821670. SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM (Kioxia Corporation)
- 18913710. WRITE LATENCY AND ENERGY USING ASYMMETRIC CELL DESIGN (MICRON TECHNOLOGY, INC.)
- 18945338. STORAGE DEVICE FOR DETERMINING MEMORY CELL TYPE AFTER DATA INPUT DURING PROGRAM OPERATION AND OPERATING METHOD THEREOF (SK hynix Inc.)
- 18949444. MEMORY CIRCUITS AND DEVICES, AND METHODS THEREOF (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18960230. SEMICONDUCTOR STORAGE DEVICE (Kioxia Corporation)
- 18964133. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18967232. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18967733. Computing-In-Memory Architecture (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18967761. INFORMATION PROCESSING APPARATUS (Kioxia Corporation)
- 18999421. DYNAMIC PROCESSING OF STORAGE COMMAND BASED ON INTERNAL OPERATIONS OF STORAGE SYSTEM (Kioxia Corporation)
- 19008495. BIAS VOLTAGE SCHEMES DURING PRE-PROGRAMMING AND PROGRAMMING PHASES (Micron Technology, Inc.)
- 19010407. ERASING MEMORY (Micron Technology, Inc.)
I
- International Business Machines Corporation (20250069658). Threshold Voltage Reduction in Memristive Devices
- International business machines corporation (20250069658). Threshold Voltage Reduction in Memristive Devices
- International Business Machines Corporation patent applications on February 27th, 2025
K
- Kioxia corporation (20240096426). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia corporation (20240305279). DATA LATCH CIRCUIT, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia corporation (20240420765). SEMICONDUCTOR STORAGE DEVICE
- Kioxia corporation (20240422985). SEMICONDUCTOR MEMORY DEVICE
- Kioxia corporation (20240428866). SEMICONDUCTOR MEMORY DEVICE
- Kioxia corporation (20250093927). INFORMATION PROCESSING APPARATUS
- Kioxia corporation (20250095741). SEMICONDUCTOR MEMORY DEVICE
- Kioxia corporation (20250095748). SEMICONDUCTOR MEMORY DEVICE
- Kioxia corporation (20250095752). SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM
- Kioxia Corporation patent applications on December 19th, 2024
- Kioxia Corporation patent applications on December 26th, 2024
- Kioxia Corporation patent applications on March 20th, 2025
- Kioxia Corporation patent applications on March 21st, 2024
- Kioxia Corporation patent applications on September 12th, 2024
M
- Micron technology, inc. (20240194272). METHOD AND SYSTEM FOR ACCESSING MEMORY CELLS simplified abstract
- Micron technology, inc. (20240221840). MULTI-PROGRAM OF MEMORY CELLS WITHOUT INTERVENING ERASE OPERATIONS simplified abstract
- Micron technology, inc. (20240233825). VOLTAGE REGULATOR SUPPLY FOR INDEPENDENT WORDLINE READS simplified abstract
- Micron technology, inc. (20240233836). POWER MANAGEMENT simplified abstract
- Micron technology, inc. (20240249772). ELONGATED CAPACITORS IN 3D NAND MEMORY DEVICES simplified abstract
- Micron technology, inc. (20240249777). STORING ONE DATA VALUE BY PROGRAMMING A FIRST MEMORY CELL AND A SECOND MEMORY CELL simplified abstract
- Micron technology, inc. (20240281378). HYBRID PARALLEL PROGRAMMING OF SINGLE-LEVEL CELL MEMORY simplified abstract
- Micron technology, inc. (20240288924). POWER ARBITRATION FOR SYSTEMS OF ELECTRONIC COMPONENTS simplified abstract
- Micron technology, inc. (20240290396). POWER MANAGEMENT ASSOCIATED WITH MEMORY AND CONTROLLER simplified abstract
- Micron technology, inc. (20240296896). READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION simplified abstract
- Micron technology, inc. (20240304244). TECHNIQUES FOR PARALLEL MEMORY CELL ACCESS simplified abstract
- Micron technology, inc. (20240412792). SIMPLIFIED OPERATIONS TO READ MEMORY CELLS COARSELY PROGRAMMED VIA INTERLEAVED TWO-PASS DATA PROGRAMMING TECHNIQUES
- Micron technology, inc. (20250118372). WRITE LATENCY AND ENERGY USING ASYMMETRIC CELL DESIGN
- Micron technology, inc. (20250140324). ERASING MEMORY
- Micron technology, inc. (20250149094). BIAS VOLTAGE SCHEMES DURING PRE-PROGRAMMING AND PROGRAMMING PHASES
- MICRON TECHNOLOGY, INC. patent applications on April 10th, 2025
- Micron Technology, Inc. patent applications on August 22nd, 2024
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on December 12th, 2024
- Micron Technology, Inc. patent applications on February 15th, 2024
- Micron Technology, Inc. patent applications on February 1st, 2024
- Micron Technology, Inc. patent applications on February 8th, 2024
- Micron Technology, Inc. patent applications on July 11th, 2024
- Micron Technology, Inc. patent applications on July 25th, 2024
- MICRON TECHNOLOGY, INC. patent applications on July 4th, 2024
- Micron Technology, Inc. patent applications on June 13th, 2024
- Micron Technology, Inc. patent applications on May 1st, 2025
- Micron Technology, Inc. patent applications on May 8th, 2025
- Micron Technology, Inc. patent applications on September 12th, 2024
- Micron Technology, Inc. patent applications on September 5th, 2024
N
S
- Samsung electronics co., ltd. (20240096427). METHOD AND CIRCUIT FOR PROVIDING AUXILIARY POWER AND STORAGE DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240127865). CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240194243). NONVOLATILE MEMORY DEVICES simplified abstract
- Samsung electronics co., ltd. (20240194273). NONVOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND METHOD OF OPERATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240201774). STORAGE CONTROLLER, STORAGE DEVICE INCLUDING THE SAME, AND OPERATION METHOD OF STORAGE CONTROLLER simplified abstract
- Samsung electronics co., ltd. (20240203499). NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING THE NONVOLATILE MEMORY DEVICES simplified abstract
- Samsung electronics co., ltd. (20240221846). METHOD OF OPERATING MEMORY DEVICE AND MEMORY DEVICE PERFORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240242765). NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME AND OPERATING METHOD OF NON-VOLATILE MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240249781). CLOCK SIGNAL GENERATOR AND METHOD OF OPERATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240265977). FLASH MEMORY FOR ADJUSTING TRIP VOLTAGE USING VOLTAGE REGULATOR AND SAMPLING SWITCH CIRCUIT AND SENSING METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240268133). MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240274206). NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240290399). FLASH MEMORY AND READ RECOVERY METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240312491). MEMORY MODULES INCLUDING A MIRRORING CIRCUIT AND METHODS OF OPERATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240312531). MEMORY DEVICE INCLUDING CHARGE PUMP, AND OPERATION METHOD OF THE MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240331774). NONVOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND METHOD OF TESTING NONVOLATILE MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240331785). NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240347114). SERIAL INTERFACE RECEIVER AND AN OFFSET CALIBRATION METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240412789). NON -VOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF
- Samsung electronics co., ltd. (20250124983). MEMORY DEVICES HAVING BUILT-IN POWER SUPPORTING CONTROL CIRCUITS THAT PROVIDE INCREASED PROGRAM AND READ RELIABILITY
- Samsung Electronics Co., Ltd. patent applications on April 17th, 2025
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 15th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 29th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on December 12th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 12th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 23rd, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 23rd, 2025
- Samsung Electronics Co., Ltd. patent applications on July 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 4th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 13th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 20th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 20th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- Samsung Electronics Co., Ltd. patent applications on October 17th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on October 17th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 3rd, 2024
- Samsung Electronics Co., Ltd. patent applications on September 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on September 19th, 2024
- Sk hynix inc. (20240161834). MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract
- Sk hynix inc. (20250069664). STORAGE DEVICE FOR DETERMINING MEMORY CELL TYPE AFTER DATA INPUT DURING PROGRAM OPERATION AND OPERATING METHOD THEREOF
- Sk hynix inc. (20250095696). MEMORY DEVICE GENERATING VOLTAGE RESPONSIVE TO TEMPERATURE AND METHOD OF OPERATING THE SAME
- Sk hynix inc. (20250131963). MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- SK hynix Inc. patent applications on April 24th, 2025
- SK hynix Inc. patent applications on February 13th, 2025
- SK hynix Inc. patent applications on February 27th, 2025
- SK hynix Inc. patent applications on January 18th, 2024
- SK hynix Inc. patent applications on March 20th, 2025
- SK hynix Inc. patent applications on May 16th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20250095702). Computing-In-Memory Architecture
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 20th, 2025
- Taiwan semiconductor manufacturing company, ltd. (20240136008). METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240203461). HEADER CIRCUIT PLACEMENT IN MEMORY DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250069659). MEMORY CIRCUITS AND DEVICES, AND METHODS THEREOF
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 27th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on June 20th, 2024