Kioxia corporation (20250095741). SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

Organization Name

kioxia corporation

Inventor(s)

Xu Li of Yokohama Kanagawa JP

SEMICONDUCTOR MEMORY DEVICE

This abstract first appeared for US patent application 20250095741 titled 'SEMICONDUCTOR MEMORY DEVICE

Original Abstract Submitted

a semiconductor memory device includes a memory cell array, a well voltage control circuit, and a source voltage control circuit. before writing data, first and second transistors respectively connected to a select gate line and a word line are turned on at a first timing, and a ground voltage is applied to the first transistor at a second timing and to the second transistor at a third timing. the source voltage control circuit applies a first voltage to the source line at a fourth timing that is simultaneous with or after the first timing and before the second timing, and the well voltage control circuit applies the first voltage to the well region at a fifth timing that is simultaneous with or after the first timing and before the second timing, and applies a ground voltage to the well region at a sixth timing that is after the fifth timing.