CHANNEL PRE-CHARGE PROCESS FOR MEMORY DEVICES

Organization Name

Western Digital Technologies, Inc.

Inventor(s)

Jonathan Huynh of San Jose CA (US)

Khanh Nguyen of San Ramon CA (US)

Xiang Yang of Santa Clara CA (US)

CHANNEL PRE-CHARGE PROCESS FOR MEMORY DEVICES

This abstract first appeared for US patent application 18230371 titled 'CHANNEL PRE-CHARGE PROCESS FOR MEMORY DEVICES

Original Abstract Submitted

The memory device includes a memory block that has a plurality of memory cells that are arranged in a plurality of word lines and in a plurality of channels. The memory device also includes circuitry that is configured to conduct a hole pre-charge operation to inject holes into the plurality of channels. During the hole pre-charge operation, the circuitry applies a positive CELSRC pre-charge voltage to a source line of the memory block and applies a negative unselected word line pre-charge voltage to a plurality of unselected word lines in the memory block to make a plurality of memory cells in the memory block conductive to holes.