TECHNIQUES FOR PARALLEL MEMORY CELL ACCESS

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TECHNIQUES FOR PARALLEL MEMORY CELL ACCESS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240304244 titled 'TECHNIQUES FOR PARALLEL MEMORY CELL ACCESS

The patent application describes methods, systems, and devices for parallel memory cell access in a memory device with multiple tiers of memory cells.

During the first duration, a first voltage is applied to word lines to threshold memory cells in a first subset.
A second voltage is then applied during the second duration to write a logic state to the memory cells in the first subset and threshold memory cells in a second subset.
Finally, a third voltage is applied during the third duration to write a second logic state to the memory cells in the second subset.

Potential Applications: - This technology can be used in high-performance computing systems. - It can also be applied in data centers for efficient data storage and retrieval.

Problems Solved: - Enables faster and more efficient access to memory cells. - Allows for parallel processing of memory operations.

Benefits: - Improved speed and efficiency in memory access. - Enhanced performance in computing systems.

Commercial Applications: - This technology can be utilized in servers, supercomputers, and other high-performance computing systems to enhance their memory access capabilities.

Questions about Parallel Memory Cell Access: 1. How does this technology improve memory access speed compared to traditional methods? 2. What are the potential challenges in implementing this parallel memory cell access technique in real-world applications?

Frequently Updated Research: - Stay updated on advancements in memory cell access techniques and parallel processing technologies to enhance the efficiency and performance of computing systems.

Original Abstract Submitted

methods, systems, and devices for techniques for parallel memory cell access are described. a memory device may include multiple tiers of memory cells. during a first duration, a first voltage may be applied to a set of word lines coupled with a tier of memory cells to threshold one or more memory cells included in a first subset of memory cells of the tier. during a second duration, a second voltage may be applied to the set of word lines to write a first logic state to the one or more memory cells of the first subset and to threshold one or more memory cells included in a second subset of memory cells of the tier. during a third duration, a third voltage may be applied to the set of word lines to write a second logic state to the one or more memory cells of the second subset.