HYBRID PARALLEL PROGRAMMING OF SINGLE-LEVEL CELL MEMORY

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HYBRID PARALLEL PROGRAMMING OF SINGLE-LEVEL CELL MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240281378 titled 'HYBRID PARALLEL PROGRAMMING OF SINGLE-LEVEL CELL MEMORY

The memory device described in the patent application includes a page buffer with multiple registers and a memory array configured as single-level cell (SLC) memory, with a set of sub-blocks coupled with the page buffer. Control logic is connected to the page buffer and is responsible for storing the first page of SLC data in the multiple registers, followed by storing a subsequent page of the SLC data in the same registers. The control logic then concurrently programs both the subsequent page and the first page of data stored in the multiple registers to the set of sub-blocks, with some of the programming operations being performed in parallel.

Memory device with page buffer and multiple registers
Memory array configured as single-level cell (SLC) memory
Set of sub-blocks coupled with the page buffer
Control logic for storing and programming SLC data
Concurrent programming of multiple pages to sub-blocks

Potential Applications: - High-speed data storage systems - Embedded memory in electronic devices - Solid-state drives (SSDs) - Industrial automation systems

Problems Solved: - Efficient storage and retrieval of data - Enhanced performance in memory operations - Optimized programming of memory cells

Benefits: - Faster data access and transfer speeds - Improved reliability and durability of memory devices - Reduced power consumption in memory operations

Commercial Applications: Title: "Advanced Memory Device for High-Performance Data Storage" This technology can be utilized in various commercial applications such as: - Consumer electronics - Automotive systems - Cloud computing servers - Medical devices

Questions about the technology: 1. How does the concurrent programming of multiple pages improve memory performance? 2. What are the key advantages of using single-level cell (SLC) memory in this memory device?

Frequently Updated Research: Stay updated on the latest advancements in memory technology, particularly in the field of single-level cell (SLC) memory and parallel programming techniques for memory arrays.

Original Abstract Submitted

a memory device includes a page buffer with multiple registers and a memory array, configured as single-level cell (slc) memory, including a set of sub-blocks coupled with the page buffer. control logic is operatively coupled with the page buffer and causes a first page of slc data to be stored in the multiple registers. the control logic causes a subsequent page of the slc data to be stored in the multiple registers. the control logic causes the subsequent page and the first page of the slc data stored in the multiple registers to be concurrently programmed to the set of sub-blocks. the control logic causes at least some of the operations for programming the first page and the subsequent page to the set of sub-blocks to be performed in parallel.