Micron technology, inc. (20250140324). ERASING MEMORY
ERASING MEMORY
Organization Name
Inventor(s)
Giovanni Maria Paolucci of Milano IT
Emilio Camerlenghi of Bergamo IT
Gianpietro Carnevale of Bottanuco IT
Augusto Benvenuti of Lallio IT
ERASING MEMORY
This abstract first appeared for US patent application 20250140324 titled 'ERASING MEMORY
Original Abstract Submitted
memories having a controller configured to increase a voltage level applied to a data line and decrease a voltage level applied to a control gate of a transistor connected between the data line and a string of series-connected memory cells during a first period of time, increase the voltage level applied to the data line and increase the voltage level applied to the control gate of the transistor at a same rate in response to an end of the first period of time, and ceasing increasing the voltage level applied to the data line and ceasing increasing the voltage level applied to the control gate of the transistor in response to the voltage level applied to the data line reaching a predetermined voltage level.