18821670. SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM (Kioxia Corporation)
SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM
Organization Name
Inventor(s)
Yoshikazu Takeyama of Fujisawa Kanagawa JP
Keisuke Takahashi of Yokohama Kanagawa JP
SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM
This abstract first appeared for US patent application 18821670 titled 'SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM
Original Abstract Submitted
A semiconductor memory device includes a memory cell array, a control circuit, and a voltage generation circuit. The control circuit is configured to perform a first operation to access the memory cell array and then a second operation to access the memory cell array. The voltage generation circuit is configured to generate a first operation voltage, which is supplied from an output terminal of the voltage generation circuit to the memory cell array during the first operation, and a second operation voltage, which is supplied from the output terminal to the memory cell array during the second operation. The control circuit is configured to control the voltage generation circuit to maintain a voltage output from the output terminal to be at the first operation voltage after the first operation until the second operation voltage starts to be supplied to the memory cell array for the second operation.