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Category:H10D84/83
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This category has the following 77 subcategories, out of 77 total.
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Pages in category "H10D84/83"
The following 70 pages are in this category, out of 70 total.
1
- 18982590. NITRIDE SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18982762. ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME IN FIELD-EFFECT TRANSISTORS (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18984199. SEMICONDUCTOR DEVICE STRUCTURE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18984950. MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR STRUCTURE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18985586. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18986226. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING OXIDE SUB-FINS (Intel Corporation)
- 18989132. STANDARD-CELL LAYOUT STRUCTURE WITH HORN POWER AND SMART METAL CUT (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18989332. INTEGRATED CIRCUIT DEVICE AND METHOD OF FORMING THE SAME (Samsung Electronics Co., Ltd.)
- 18990878. SEMICONDUCTOR DEVICE WITH WRAP AROUND SILICIDE AND HYBRID FIN (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18991796. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (Samsung Electronics Co., Ltd.)
- 18991798. SEMICONDUCTOR STRUCTURE HAVING FUSE BELOW GATE STRUCTURE AND METHOD OF MANUFACTURING THEREOF (NANYA TECHNOLOGY CORPORATION)
- 18991919. Semiconductor Structure Cutting Process and Structures Formed Thereby (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18999923. EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 18999945. ADVANCED LITHOGRAPHY AND SELF-ASSEMBLED DEVICES (Intel Corporation)
- 19000050. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH IMPROVED CAP (Intel Corporation)
- 19002487. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19002734. SEMICONDUCTOR STRUCTURE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 19002882. Semiconductor Device and Method (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 19004021. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP (Intel Corporation)
- 19004041. SEMICONDUCTOR DEVICE WITH METAL GATE FILL STRUCTURE (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19004755. BACKSIDE PN JUNCTION DIODE (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19009221. Contacts for Semiconductor Devices and Methods of Forming the Same (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19009248. INTEGRATED CIRCUIT DEVICE INCLUDING METAL-OXIDE SEMICONDUCTOR TRANSISTORS (SAMSUNG ELECTRONICS CO., LTD.)
- 19009482. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19011071. Gate Spacers in Semiconductor Devices (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19016771. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN CONTACT STRUCTURES (Intel Corporation)
- 19017760. DEVICES AND METHODS FOR LAYOUT-DEPENDENT VOLTAGE HANDLING IMPROVEMENT IN SWITCH STACKS (SKYWORKS SOLUTIONS, INC.)
- 19018568. SEMICONDUCTOR DEVICE STRUCTURE (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19018623. MULTI-GATE DEVICES AND METHOD OF FABRICATION THEREOF (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19019016. SEMICONDUCTOR DEVICE AND METHOD OF FORMING MICRO INTERCONNECT STRUCTURES (SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC)
- 19019071. SEMICONDUCTOR DEVICE AND METHOD OF FORMING MICRO INTERCONNECT STRUCTURES (SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC)
I
- Intel corporation (20250120152). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING OXIDE SUB-FINS
- Intel corporation (20250125260). ADVANCED LITHOGRAPHY AND SELF-ASSEMBLED DEVICES
- Intel corporation (20250126869). EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250133811). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH IMPROVED CAP
- Intel corporation (20250142935). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Intel corporation (20250151338). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN CONTACT STRUCTURES
- Intel Corporation patent applications on April 10th, 2025
- Intel Corporation patent applications on April 17th, 2025
- Intel Corporation patent applications on April 24th, 2025
- Intel Corporation patent applications on May 1st, 2025
- Intel Corporation patent applications on May 8th, 2025
N
S
- Samsung electronics co., ltd. (20250126854). INTEGRATED CIRCUIT DEVICE AND METHOD OF FORMING THE SAME
- Samsung electronics co., ltd. (20250126882). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Samsung electronics co., ltd. (20250142947). INTEGRATED CIRCUIT DEVICE INCLUDING METAL-OXIDE SEMICONDUCTOR TRANSISTORS
- Samsung Electronics Co., Ltd. patent applications on April 17th, 2025
- Samsung Electronics Co., Ltd. patent applications on May 1st, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on May 1st, 2025
T
- Taiwan semiconductor manufacturing co., ltd. (20250118674). STANDARD-CELL LAYOUT STRUCTURE WITH HORN POWER AND SMART METAL CUT
- Taiwan semiconductor manufacturing co., ltd. (20250120115). ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME IN FIELD-EFFECT TRANSISTORS
- Taiwan semiconductor manufacturing co., ltd. (20250120139). SEMICONDUCTOR DEVICE STRUCTURE
- Taiwan semiconductor manufacturing co., ltd. (20250120171). MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR STRUCTURE
- Taiwan semiconductor manufacturing co., ltd. (20250126822). Semiconductor Device and Method
- Taiwan semiconductor manufacturing co., ltd. (20250126837). SEMICONDUCTOR DEVICE WITH WRAP AROUND SILICIDE AND HYBRID FIN
- Taiwan semiconductor manufacturing co., ltd. (20250126881). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Taiwan semiconductor manufacturing co., ltd. (20250126883). Semiconductor Structure Cutting Process and Structures Formed Thereby
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 10th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 17th, 2025
- Taiwan semiconductor manufacturing company, ltd. (20250140563). SEMICONDUCTOR DEVICE WITH METAL GATE FILL STRUCTURE
- Taiwan semiconductor manufacturing company, ltd. (20250142926). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Taiwan semiconductor manufacturing company, ltd. (20250142932). Contacts for Semiconductor Devices and Methods of Forming the Same
- Taiwan semiconductor manufacturing company, ltd. (20250142950). BACKSIDE PN JUNCTION DIODE
- Taiwan semiconductor manufacturing company, ltd. (20250151305). MULTI-GATE DEVICES AND METHOD OF FABRICATION THEREOF
- Taiwan semiconductor manufacturing company, ltd. (20250151359). SEMICONDUCTOR DEVICE STRUCTURE
- Taiwan semiconductor manufacturing company, ltd. (20250151368). Gate Spacers in Semiconductor Devices
- Taiwan semiconductor manufacturing company, ltd. (20250151383). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 1st, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 8th, 2025