SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Li-Zhen Yu of New Taipei City TW

Chia-Hao Chang of Hsinchu City TW

Cheng-Chi Chuang of New Taipei City TW

Yu-Ming Lin of Hsinchu City TW

Chih-Hao Wang of Hsinchu County TW

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 19009482 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

A method includes forming a dummy gate structure over a substrate; forming a source/drain structure over the substrate; replacing the dummy gate structure with a metal gate structure; forming a protection cap over the metal gate structure; forming a source/drain contact over the source/drain structure; performing a selective deposition process to form a first etch stop layer on the protection cap, in which the selective deposition process has a faster deposition rate on the protection cap than on the source/drain contact; depositing a second etch stop layer over the first etch stop layer the source/drain contact; etching the second etch stop layer to form an opening; and forming a via contact in the opening.