SEMICONDUCTOR DEVICE STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chun-Fai Cheng of Tin Shui Wa HK

Liang-Yi Chen of Taipei City TW

Chi-An Wang of Hsinchu City TW

Kuan-Chung Chen of Taipei City TW

Chih-Wei Lee of New Taipei City TW

SEMICONDUCTOR DEVICE STRUCTURE

This abstract first appeared for US patent application 18984199 titled 'SEMICONDUCTOR DEVICE STRUCTURE

Original Abstract Submitted

A semiconductor device structure includes nanostructures formed over a substrate. The structure also includes a fin isolation structure formed beside the nanostructures. The structure also includes a work function layer surrounding the nanostructures and covering a sidewall of the fin isolation structure. The structure also includes a gate electrode layer covering the work function layer. The gate electrode layer has an extending portion surrounded by the work function layer.