Samsung electronics co., ltd. (20250142947). INTEGRATED CIRCUIT DEVICE INCLUDING METAL-OXIDE SEMICONDUCTOR TRANSISTORS

INTEGRATED CIRCUIT DEVICE INCLUDING METAL-OXIDE SEMICONDUCTOR TRANSISTORS

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jinhyeok Song of Incheon KR

Mingeun Song of Suwon-si KR

INTEGRATED CIRCUIT DEVICE INCLUDING METAL-OXIDE SEMICONDUCTOR TRANSISTORS

This abstract first appeared for US patent application 20250142947 titled 'INTEGRATED CIRCUIT DEVICE INCLUDING METAL-OXIDE SEMICONDUCTOR TRANSISTORS

Original Abstract Submitted

an integrated circuit device including an active region; an active cutting region at a side of the active region in a first direction; a fin active pattern extending on the active region in the first direction, the fin active pattern including a source region and a drain region; a gate pattern extending across the active region and the fin active pattern in a second direction perpendicular to the first direction, the gate pattern not being in the active cutting region; and an isolated gate contact region in contact with the gate pattern outside of the active region.