18982590. NITRIDE SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
NITRIDE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hirotaka Otake of Kyoto-shi JP
NITRIDE SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18982590 titled 'NITRIDE SEMICONDUCTOR DEVICE
Original Abstract Submitted
The present invention provides a nitride semiconductor device, including: a silicon substrate; a first lateral transistor over a first region of the silicon substrate and including: a first nitride semiconductor layer formed over the silicon substrate; and a first gate electrode, a first source electrode and a first drain electrode formed over the first nitride semiconductor layer; a second lateral transistor over a second region of the silicon substrate and including: a second nitride semiconductor layer formed over the silicon substrate; and a second gate electrode, a second source electrode and a second drain electrode formed over the second nitride semiconductor layer; a first separation trench formed over a third region; a source/substrate connecting via hole formed over the third region; and an interlayer insulating layer formed in the first separation trench.