Taiwan semiconductor manufacturing company, ltd. (20250151368). Gate Spacers in Semiconductor Devices
Gate Spacers in Semiconductor Devices
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chang-Yin Chen of Taipei City TW
Chih-Han Lin of Hsinchu City TW
Chia-Yang Liao of Hsinchu City TW
Gate Spacers in Semiconductor Devices
This abstract first appeared for US patent application 20250151368 titled 'Gate Spacers in Semiconductor Devices
Original Abstract Submitted
a semiconductor device and methods of fabricating the same are disclosed. the semiconductor device includes a substrate, a fin structure with a fin top surface disposed on the substrate, a source/drain (s/d) region disposed on the fin structure, a gate structure disposed on the fin top surface, and a gate spacer with first and second spacer portions disposed between the gate structure and the s/d region. the first spacer portion extends above the fin top surface and is disposed along a sidewall of the gate structure. the second spacer portion extends below the fin top surface and is disposed along a sidewall of the s/d region.