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Category:H10D84/03
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This category has the following 101 subcategories, out of 101 total.
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Pages in category "H10D84/03"
The following 93 pages are in this category, out of 93 total.
1
- 18984950. MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR STRUCTURE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18985586. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18986965. Separate Epitaxy Layers for Nanowire Stack GAA Device (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18989132. STANDARD-CELL LAYOUT STRUCTURE WITH HORN POWER AND SMART METAL CUT (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18989196. VERTICAL FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18989332. INTEGRATED CIRCUIT DEVICE AND METHOD OF FORMING THE SAME (Samsung Electronics Co., Ltd.)
- 18991798. SEMICONDUCTOR STRUCTURE HAVING FUSE BELOW GATE STRUCTURE AND METHOD OF MANUFACTURING THEREOF (NANYA TECHNOLOGY CORPORATION)
- 18991919. Semiconductor Structure Cutting Process and Structures Formed Thereby (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18999095. SOURCE/DRAIN FEATURE SEPARATION STRUCTURE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18999778. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES (Intel Corporation)
- 18999923. EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 19001219. RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOLTAGE SHIFTER (Intel Corporation)
- 19001750. INTEGRATED CIRCUIT DEVICES HAVING HIGHLY INTEGRATED NMOS AND PMOS TRANSISTORS THEREIN AND METHODS OF FABRICATING THE SAME (Samsung Electronics Co., Ltd.)
- 19002110. SEMICONDUCTOR DEVICE (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 19002398. SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS (Micron Technology, Inc.)
- 19002450. CUT METAL GATE REFILL WITH VOID (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 19002487. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19002734. SEMICONDUCTOR STRUCTURE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 19002882. Semiconductor Device and Method (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 19004021. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP (Intel Corporation)
- 19004052. SEMICONDUCTOR DEVICES HAVING GATE-ALL-AROUND STRUCTURE AND METHODS OF FABRICATING THE SAME (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19005147. SEMICONDUCTOR STRUCTURE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 19005855. SEMICONDUCTOR DEVICE WITH GATE ISOLATION FEATURES AND FABRICATION METHOD OF THE SAME (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19007076. SEMICONDUCTOR DEVICE HAVING A FIN AT A S/D REGION AND A SEMICONDUCTOR CONTACT OR SILICIDE INTERFACING THEREWITH (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19008393. DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 19009221. Contacts for Semiconductor Devices and Methods of Forming the Same (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19009482. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19009795. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
- 19010921. SEMICONDUCTOR DEVICE (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19011071. Gate Spacers in Semiconductor Devices (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19011229. Assemblies Having Conductive Structures Along Pillars of Semiconductor Material, and Methods of Forming Integrated Circuitry (Micron Technology, Inc.)
- 19013059. TRANSISTOR AND SEMICONDUCTOR DEVICE (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 19015443. RADIO-FREQUENCY SWITCHING DEVICES HAVING IMPROVED VOLTAGE HANDLING CAPABILITY (SKYWORKS SOLUTIONS, INC.)
- 19016771. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN CONTACT STRUCTURES (Intel Corporation)
- 19017760. DEVICES AND METHODS FOR LAYOUT-DEPENDENT VOLTAGE HANDLING IMPROVEMENT IN SWITCH STACKS (SKYWORKS SOLUTIONS, INC.)
- 19018287. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH NANOWIRES (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19018623. MULTI-GATE DEVICES AND METHOD OF FABRICATION THEREOF (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19018870. SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
- 19019077. Gate Formation Of Semiconductor Devices (Taiwan Semiconductor Manufacturing Company, Ltd.)
I
- Intel corporation (20250126832). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES
- Intel corporation (20250126869). EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250133822). RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOLTAGE SHIFTER
- Intel corporation (20250142935). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Intel corporation (20250142939). DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250151338). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN CONTACT STRUCTURES
- Intel Corporation patent applications on April 17th, 2025
- Intel Corporation patent applications on April 24th, 2025
- Intel Corporation patent applications on May 1st, 2025
- Intel Corporation patent applications on May 8th, 2025
M
- Micron technology, inc. (20250142840). SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS
- Micron technology, inc. (20250142875). Assemblies Having Conductive Structures Along Pillars of Semiconductor Material, and Methods of Forming Integrated Circuitry
- Micron Technology, Inc. patent applications on May 1st, 2025
N
S
- Samsung electronics co., ltd. (20250120162). VERTICAL FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING THE SAME
- Samsung electronics co., ltd. (20250126854). INTEGRATED CIRCUIT DEVICE AND METHOD OF FORMING THE SAME
- Samsung electronics co., ltd. (20250133819). INTEGRATED CIRCUIT DEVICES HAVING HIGHLY INTEGRATED NMOS AND PMOS TRANSISTORS THEREIN AND METHODS OF FABRICATING THE SAME
- Samsung electronics co., ltd. (20250151304). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Samsung electronics co., ltd. (20250151385). SEMICONDUCTOR DEVICE
- Samsung Electronics Co., Ltd. patent applications on April 10th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 10th, 2025
- Samsung Electronics Co., Ltd. patent applications on April 17th, 2025
- Samsung Electronics Co., Ltd. patent applications on April 24th, 2025
- Samsung Electronics Co., Ltd. patent applications on May 8th, 2025
- Semiconductor energy laboratory co., ltd. (20250124962). SEMICONDUCTOR DEVICE
- Semiconductor energy laboratory co., ltd. (20250151334). TRANSISTOR AND SEMICONDUCTOR DEVICE
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD. patent applications on April 17th, 2025
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD. patent applications on May 8th, 2025
T
- Taiwan semiconductor manufacturing co., ltd. (20250118674). STANDARD-CELL LAYOUT STRUCTURE WITH HORN POWER AND SMART METAL CUT
- Taiwan semiconductor manufacturing co., ltd. (20250120171). MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR STRUCTURE
- Taiwan semiconductor manufacturing co., ltd. (20250125150). CUT METAL GATE REFILL WITH VOID
- Taiwan semiconductor manufacturing co., ltd. (20250126822). Semiconductor Device and Method
- Taiwan semiconductor manufacturing co., ltd. (20250126842). Separate Epitaxy Layers for Nanowire Stack GAA Device
- Taiwan semiconductor manufacturing co., ltd. (20250126881). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Taiwan semiconductor manufacturing co., ltd. (20250126883). Semiconductor Structure Cutting Process and Structures Formed Thereby
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 10th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 17th, 2025
- Taiwan semiconductor manufacturing company, ltd. (20250133716). SOURCE/DRAIN FEATURE SEPARATION STRUCTURE
- Taiwan semiconductor manufacturing company, ltd. (20250133761). SEMICONDUCTOR STRUCTURE
- Taiwan semiconductor manufacturing company, ltd. (20250142857). SEMICONDUCTOR DEVICES HAVING GATE-ALL-AROUND STRUCTURE AND METHODS OF FABRICATING THE SAME
- Taiwan semiconductor manufacturing company, ltd. (20250142926). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Taiwan semiconductor manufacturing company, ltd. (20250142932). Contacts for Semiconductor Devices and Methods of Forming the Same
- Taiwan semiconductor manufacturing company, ltd. (20250142943). SEMICONDUCTOR DEVICE
- Taiwan semiconductor manufacturing company, ltd. (20250142954). SEMICONDUCTOR DEVICE HAVING A FIN AT A S/D REGION AND A SEMICONDUCTOR CONTACT OR SILICIDE INTERFACING THEREWITH
- Taiwan semiconductor manufacturing company, ltd. (20250149388). Gate Formation Of Semiconductor Devices
- Taiwan semiconductor manufacturing company, ltd. (20250151305). MULTI-GATE DEVICES AND METHOD OF FABRICATION THEREOF
- Taiwan semiconductor manufacturing company, ltd. (20250151307). STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH NANOWIRES
- Taiwan semiconductor manufacturing company, ltd. (20250151329). SEMICONDUCTOR DEVICE WITH GATE ISOLATION FEATURES AND FABRICATION METHOD OF THE SAME
- Taiwan semiconductor manufacturing company, ltd. (20250151368). Gate Spacers in Semiconductor Devices
- Taiwan semiconductor manufacturing company, ltd. (20250151383). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 24th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 1st, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 8th, 2025