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Taiwan semiconductor manufacturing company, ltd. (20250133761). SEMICONDUCTOR STRUCTURE

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SEMICONDUCTOR STRUCTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Shih-Hao Lin of Hsinchu City TW

Chia-Hung Chou of Hsinchu TW

Chih-Hsuan Chen of Hsinchu TW

Ping-En Cheng of Hsinchu TW

Hsin-Wen Su of Yunlin County TW

Chien-Chih Lin of Taichung City TW

Szu-Chi Yang of Hsinchu City TW

SEMICONDUCTOR STRUCTURE

This abstract first appeared for US patent application 20250133761 titled 'SEMICONDUCTOR STRUCTURE

Original Abstract Submitted

a semiconductor structure includes a substrate, semiconductor layers, source/drain features, metal oxide layers, and a gate structure. the semiconductor layers are over the substrate and spaced apart from each other in a z-direction. the source/drain features are over the substrate. the semiconductor layers are between the source/drain features. the metal oxide layers are on top surfaces and bottom surfaces of the semiconductor layers. the gate structure covers and is in contact with center portions of the metal oxide layers on top surfaces and bottom surfaces of the semiconductor layers.

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