Taiwan semiconductor manufacturing company, ltd. (20250133761). SEMICONDUCTOR STRUCTURE
SEMICONDUCTOR STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shih-Hao Lin of Hsinchu City TW
Hsin-Wen Su of Yunlin County TW
Chien-Chih Lin of Taichung City TW
Szu-Chi Yang of Hsinchu City TW
SEMICONDUCTOR STRUCTURE
This abstract first appeared for US patent application 20250133761 titled 'SEMICONDUCTOR STRUCTURE
Original Abstract Submitted
a semiconductor structure includes a substrate, semiconductor layers, source/drain features, metal oxide layers, and a gate structure. the semiconductor layers are over the substrate and spaced apart from each other in a z-direction. the source/drain features are over the substrate. the semiconductor layers are between the source/drain features. the metal oxide layers are on top surfaces and bottom surfaces of the semiconductor layers. the gate structure covers and is in contact with center portions of the metal oxide layers on top surfaces and bottom surfaces of the semiconductor layers.
- Taiwan semiconductor manufacturing company, ltd.
- Shih-Hao Lin of Hsinchu City TW
- Chia-Hung Chou of Hsinchu TW
- Chih-Hsuan Chen of Hsinchu TW
- Ping-En Cheng of Hsinchu TW
- Hsin-Wen Su of Yunlin County TW
- Chien-Chih Lin of Taichung City TW
- Szu-Chi Yang of Hsinchu City TW
- H10D30/01
- H10D30/62
- H10D64/01
- H10D84/01
- H10D84/03
- CPC H10D30/0243