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Category:H10B53/30
Subcategories
This category has the following 40 subcategories, out of 40 total.
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Pages in category "H10B53/30"
The following 158 pages are in this category, out of 158 total.
1
- 18065195. NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL simplified abstract (International Business Machines Corporation)
- 18089670. FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18141738. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18150289. FERROELECTRIC MEMORY DEVICE WITH BLOCKING LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18204077. FERROELECTRIC MEMORY ARCHITECTURE WITH GAP REGION simplified abstract (Micron Technology, Inc.)
- 18216490. SELF-ALIGNED MEMORY CELL WITH REPLACEMENT METAL GATE VERTICAL ACCESS TRANSISTOR AND STACKED 3D CAPACITORS (Intel Corporation)
- 18235740. Ferroelectric Assemblies and Methods of Forming Ferroelectric Assemblies simplified abstract (Micron Technology, Inc.)
- 18238028. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18315214. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18340407. 3D FERROELECTRIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18340560. THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18345817. METHOD FOR FABRICATING SELECTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SK Hynix Inc.)
- 18370207. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18419987. ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18429677. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
- 18454128. SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC CAPACITOR AND METHOD FOR MANUFACTURING THE SAME (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18468394. THIN FILM STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18477272. Efficient Memory Operation Using a Destructive Read Memory Array (Advanced Micro Devices, Inc.)
- 18492964. MEMORY WITH FRAM AND SRAM OF IC simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18495038. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18501360. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18504760. SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18521629. CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18522637. Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry simplified abstract (Micron Technology, Inc.)
- 18526454. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18531078. ELECTRONIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18580606. PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR, DROPLET DISCHARGE HEAD, LIQUID DROPLET EJECTION APPARATUS, AND FERROELECTRIC MEMORY (Konica Minolta, Inc.)
- 18589281. FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18589342. STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18594350. THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18604636. MEMORY DEVICES AND METHODS FOR FORMING THE SAME (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18612011. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18630647. SEMICONDUCTOR MEMORY DEVICES AND MANUFACTURING METHODS THEREOF (Samsung Electronics Co., Ltd.)
- 18666498. Integrated Components Which Have Both Horizontally-Oriented Transistors and Vertically-Oriented Transistors simplified abstract (Micron Technology, Inc.)
- 18671431. TWO-TERMINAL MEMORY DEVICE simplified abstract (HYUNDAI MOTOR COMPANY)
- 18671431. TWO-TERMINAL MEMORY DEVICE simplified abstract (KIA CORPORATION)
- 18671441. METHOD FOR MANUFACTURING A TWO-TERMINAL MEMORY DEVICE simplified abstract (HYUNDAI MOTOR COMPANY)
- 18671441. METHOD FOR MANUFACTURING A TWO-TERMINAL MEMORY DEVICE simplified abstract (KIA CORPORATION)
- 18673308. CAPACITOR COMPRISING ANTI-FERROELECTRIC LAYERS AND HIGH-K DIELECTRIC LAYERS simplified abstract (SK hynix Inc.)
- 18680742. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
- 18745377. SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
- 18816978. METHOD OF FORMING A MEMORY DEVICE IN A RECESSED FEATURE (Tokyo Electron Limited)
- 18947139. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18960091. ELECTRONIC DEVICES INCLUDING FERROELECTRIC MATERIALS, AND RELATED MEMORY DEVICES (Micron Technology, Inc.)
- 18985584. Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and Method Used in Forming an Electronic Device Comprising Conductive Material and Ferroelectric Material (MICRON TECHNOLOGY, INC.)
- 19000384. HIGH-DENSITY MEMORY DEVICE WITH PLANAR THIN FILM TRANSISTOR (TFT) SELECTOR AND METHODS FOR MAKING THE SAME (Taiwan Semiconductor Manufacturing Company Limited)
- 19008075. SINGLE-CRYSTAL TRANSISTORS FOR MEMORY DEVICES (Micron Technology, Inc.)
- 19013848. SYSTEM-ON-CHIP WITH FERROELECTRIC RANDOM ACCESS MEMORY AND TUNABLE CAPACITOR (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19018073. Memory Arrays Comprising Vertically-Alternating Tiers Of Insulative Material And Memory Cells And Methods Of Forming A Memory Array Comprising Memory Cells Individually Comprising A Transistor And A Capacitor (Micron Technology, Inc.)
A
H
- Huawei technologies co., ltd. (20240130139). FERROELECTRIC MEMORY AND STORAGE DEVICE simplified abstract
- Huawei technologies co., ltd. (20240206189). FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE simplified abstract
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on April 18th, 2024
- Huawei Technologies Co., Ltd. patent applications on January 30th, 2025
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on June 20th, 2024
- Hyundai motor company (20240315046). TWO-TERMINAL MEMORY DEVICE simplified abstract
- Hyundai motor company (20240315047). METHOD FOR MANUFACTURING A TWO-TERMINAL MEMORY DEVICE simplified abstract
- HYUNDAI MOTOR COMPANY patent applications on September 19th, 2024
I
- Intel corporation (20240431117). MEMORY WITH ONE ACCESS TRANSISTOR COUPLED TO MULTIPLE CAPACITORS
- Intel corporation (20250008740). SELF-ALIGNED MEMORY CELL WITH REPLACEMENT METAL GATE VERTICAL ACCESS TRANSISTOR AND STACKED 3D CAPACITORS
- Intel Corporation patent applications on December 26th, 2024
- Intel Corporation patent applications on January 23rd, 2025
- Intel Corporation patent applications on January 2nd, 2025
- International business machines corporation (20240194236). NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL simplified abstract
- International business machines corporation (20240224539). FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST simplified abstract
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on July 4th, 2024
- International Business Machines Corporation patent applications on June 13th, 2024
K
M
- Micron technology, inc. (20240164114). Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry simplified abstract
- Micron technology, inc. (20240206190). An Array Of Capacitors, An Array Of Memory Cells, Method Used In Forming An Array Of Memory Cells, And Method Used In Forming An Array Of Capacitors simplified abstract
- Micron technology, inc. (20240265960). Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays simplified abstract
- Micron technology, inc. (20240292630). MEMORY DEVICES HAVING ADJACENT MEMORY CELLS WITH MITIGATED DISTURB RISK simplified abstract
- Micron technology, inc. (20240306399). Integrated Components Which Have Both Horizontally-Oriented Transistors and Vertically-Oriented Transistors simplified abstract
- Micron technology, inc. (20240324236). Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract
- Micron technology, inc. (20250098175). ELECTRONIC DEVICES INCLUDING FERROELECTRIC MATERIALS, AND RELATED MEMORY DEVICES
- Micron technology, inc. (20250118493). Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and Method Used in Forming an Electronic Device Comprising Conductive Material and Ferroelectric Material
- Micron technology, inc. (20250142909). SINGLE-CRYSTAL TRANSISTORS FOR MEMORY DEVICES
- Micron technology, inc. (20250151284). Memory Arrays Comprising Vertically-Alternating Tiers Of Insulative Material And Memory Cells And Methods Of Forming A Memory Array Comprising Memory Cells Individually Comprising A Transistor And A Capacitor
- MICRON TECHNOLOGY, INC. patent applications on April 10th, 2025
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on August 8th, 2024
- Micron Technology, Inc. patent applications on February 20th, 2025
- Micron Technology, Inc. patent applications on January 30th, 2025
- Micron Technology, Inc. patent applications on June 20th, 2024
- Micron Technology, Inc. patent applications on March 20th, 2025
- Micron Technology, Inc. patent applications on May 16th, 2024
- Micron Technology, Inc. patent applications on May 1st, 2025
- Micron Technology, Inc. patent applications on May 8th, 2025
- Micron Technology, Inc. patent applications on September 12th, 2024
- Micron Technology, Inc. patent applications on September 26th, 2024
- Micron Technology, Inc. patent applications on September 5th, 2024
S
- Samsung electronics co., ltd. (20240099017). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240164115). SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240194761). ELECTRONIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240268123). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240306398). THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240315045). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240324239). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240349511). CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240357796). SEMICONDUCTOR MEMORY DEVICES simplified abstract
- Samsung electronics co., ltd. (20240357832). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20250017021). SEMICONDUCTOR MEMORY DEVICES AND MANUFACTURING METHODS THEREOF
- Samsung electronics co., ltd. (20250063738). SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Samsung electronics co., ltd. (20250133746). SEMICONDUCTOR DEVICE
- Samsung Electronics Co., Ltd. patent applications on April 24th, 2025
- Samsung Electronics Co., Ltd. patent applications on August 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 13th, 2025
- Samsung Electronics Co., Ltd. patent applications on February 20th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 20th, 2025
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 9th, 2025
- Samsung Electronics Co., Ltd. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 13th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 17th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on October 17th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 24th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 12th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on September 19th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 26th, 2024
- Sk hynix inc. (20240313040). CAPACITOR COMPRISING ANTI-FERROELECTRIC LAYERS AND HIGH-K DIELECTRIC LAYERS simplified abstract
- SK hynix Inc. patent applications on January 18th, 2024
- SK hynix Inc. patent applications on September 19th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240164111). ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY LAYER simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on May 16th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240114698). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240203472). CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381662). FERROELECTRIC MEMORY DEVICE COMPRISING A CHIMNEY SEED STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381663). INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381664). Ferroelectric Memory Device and Method of Manufacturing the Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381665). SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250072003). SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC CAPACITOR AND METHOD FOR MANUFACTURING THE SAME
- Taiwan semiconductor manufacturing company, ltd. (20250072004). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
- Taiwan semiconductor manufacturing company, ltd. (20250151285). SYSTEM-ON-CHIP WITH FERROELECTRIC RANDOM ACCESS MEMORY AND TUNABLE CAPACITOR
- Taiwan semiconductor manufacturing company, ltd. (20250151287). MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 27th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 6th, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 23rd, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on June 20th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 8th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024
- Texas instruments incorporated (20240349510). INTEGRATED CIRCUIT DEVICE WITH FERROELECTRIC CAPACITOR simplified abstract
- TEXAS INSTRUMENTS INCORPORATED patent applications on October 17th, 2024
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- US Patent Application 18032651. Ferroelectric Device and Semiconductor Device simplified abstract
- US Patent Application 18200135. SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18245098. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE simplified abstract
- US Patent Application 18446755. MOBILITY ENHANCEMENT BY SOURCE AND DRAIN STRESS LAYER OR IMPLANTATION IN THIN FILM TRANSISTORS simplified abstract