Samsung electronics co., ltd. (20250133746). SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
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SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250133746 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device includes a capacitor structure including a bottom electrode, a first dielectric layer on the bottom electrode, a second dielectric layer on the first dielectric layer, a third dielectric layer on the second dielectric layer, and a top electrode on the third dielectric layer, where each of the first dielectric layer and the third dielectric layer includes zirconium oxide, the second dielectric layer includes hafnium-zirconium oxide, and each of the first dielectric layer, the second dielectric layer, and the third dielectric layer includes a first crystal phase and a second crystal phase.