18141738. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18141738 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes memory cells with a unique memcitor structure, combining a ferroelectric material information storage layer with a fixed layer made of paraelectric or antiferroelectric material.
- Memory cells in the semiconductor device consist of a cell transistor and a memcitor.
- The memcitor includes an information storage layer with a ferroelectric material, a first electrode, and a second electrode.
- A fixed layer, made of paraelectric or antiferroelectric material, is stacked on the information storage layer.
- A third electrode is connected to the fixed layer without contacting the information storage layer.
Potential Applications
The technology described in the patent application could be applied in:
- Non-volatile memory devices
- High-speed data storage systems
Problems Solved
This technology addresses issues such as:
- Data retention in memory cells
- Speed and efficiency of data storage and retrieval
Benefits
The benefits of this technology include:
- Improved data storage capacity
- Enhanced data retention and reliability
Potential Commercial Applications
The technology could find commercial applications in:
- Consumer electronics
- Data centers
Possible Prior Art
One example of prior art in this field is the use of ferroelectric materials in memory devices, but the specific memcitor structure described in this patent application appears to be novel.
Unanswered Questions
How does this technology compare to existing memory cell structures in terms of speed and efficiency?
The article does not provide a direct comparison with existing memory cell structures in terms of speed and efficiency. Further research or testing may be needed to determine the performance advantages of this technology.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the potential challenges in scaling up this technology for mass production. Factors such as cost, manufacturing processes, and compatibility with existing systems could pose challenges that need to be explored further.
Original Abstract Submitted
A semiconductor device includes a plurality of memory cells each including a cell transistor and a memcitor connected to the cell transistor, and the memcitor includes an information storage layer including a ferroelectric material, a first electrode and a second electrode connected to both ends of the information storage layer, a fixed layer stacked on the information storage layer and including a paraelectric material or an antiferroelectric material, and a third electrode connected to the fixed layer without contacting the information storage layer.