Micron technology, inc. (20250142909). SINGLE-CRYSTAL TRANSISTORS FOR MEMORY DEVICES
SINGLE-CRYSTAL TRANSISTORS FOR MEMORY DEVICES
Organization Name
Inventor(s)
Fatma Arzum Simsek-ege of Boise ID US
Masihhur R. Laskar of Meridian ID US
Nicholas R. Tapias of Boise ID US
Darwin Franseda Fan of Boise ID US
SINGLE-CRYSTAL TRANSISTORS FOR MEMORY DEVICES
This abstract first appeared for US patent application 20250142909 titled 'SINGLE-CRYSTAL TRANSISTORS FOR MEMORY DEVICES
Original Abstract Submitted
methods, systems, and devices for single-crystal transistors for memory devices are described. in some examples, a cavity may be formed through at least a portion of one or more dielectric materials, which may be deposited above a deck of memory cells. the cavity may include a taper, such as a taper toward a point, or a taper having an included angle that is within a range, or a taper from a cross-sectional area to some fraction of the cross-sectional area, among other examples. a semiconductor material may be deposited in the cavity and above the one or more dielectric materials, and formed in a single crystalline arrangement based on heating and cooling the deposited semiconductor material. one or more portions of a transistor, such as a channel portion of a transistor, may be formed at least in part by doping the single crystalline arrangement of the semiconductor material.