THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jinseong Heo of Suwon-si (KR)

Taehwan Moon of Suwon-si (KR)

Seunggeol Nam of Suwon-si (KR)

Hyunjae Lee of Suwon-si (KR)

THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18340560 titled 'THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE

Simplified Explanation

The abstract describes a three-dimensional (3D) ferroelectric memory device that includes multiple stacked gate electrodes, ferroelectric layers, intermediate electrodes, a gate insulating layer, and a channel layer. The widths of the intermediate electrodes are greater than the widths of the ferroelectric layers in contact with them.

The device is a 3D ferroelectric memory device.
It includes multiple gate electrodes stacked on a substrate.
The gate electrodes are in contact with multiple ferroelectric layers.
Intermediate electrodes are in contact with the ferroelectric layers.
A gate insulating layer is in contact with the intermediate electrodes.
A channel layer is in contact with the gate insulating layer.
The widths of the intermediate electrodes are greater than the widths of the ferroelectric layers in contact with them.

Potential Applications:

Memory devices: The 3D ferroelectric memory device can be used in various memory applications, such as non-volatile memory or random-access memory (RAM).
Data storage: The device can be used for storing and retrieving data in electronic devices, such as computers, smartphones, and tablets.
High-density memory: The 3D structure allows for increased memory density, enabling more data to be stored in a smaller space.

Problems Solved:

Limited memory capacity: The 3D structure of the device allows for increased memory capacity compared to traditional two-dimensional memory devices.
Data retention: Ferroelectric materials used in the device have the ability to retain data even when power is turned off, solving the problem of data loss in volatile memory.

Benefits:

Increased memory density: The 3D structure allows for stacking multiple layers of memory, increasing the memory density and capacity.
Non-volatile memory: The ferroelectric materials used in the device retain data even without power, providing non-volatile memory capabilities.
Faster data access: The device can provide faster data access and retrieval compared to traditional memory devices, improving overall system performance.

Original Abstract Submitted

A three-dimensional (3D) ferroelectric memory device may include a plurality of gate electrodes stacked on a substrate, a plurality of ferroelectric layers in contact with the plurality of gate electrodes, a plurality of intermediate electrodes in contact with the plurality of ferroelectric layers, a gate insulating layer in contact with the plurality of intermediate electrodes, and a channel layer in contact with the gate insulating layer. Widths of the intermediate electrodes may be greater than widths of the ferroelectric layers in contact with the intermediate electrodes.