Samsung electronics co., ltd. (20250017021). SEMICONDUCTOR MEMORY DEVICES AND MANUFACTURING METHODS THEREOF

SEMICONDUCTOR MEMORY DEVICES AND MANUFACTURING METHODS THEREOF

Organization Name

samsung electronics co., ltd.

Inventor(s)

Seulji Song of Suwon-si KR

Suhyun Bang of Suwon-si KR

Hwayeong Lee of Suwon-si KR

SEMICONDUCTOR MEMORY DEVICES AND MANUFACTURING METHODS THEREOF

This abstract first appeared for US patent application 20250017021 titled 'SEMICONDUCTOR MEMORY DEVICES AND MANUFACTURING METHODS THEREOF

Original Abstract Submitted

an integrated circuit device including first and second vertical transistors, wherein the first and second vertical transistors are apart from each other in a first direction; a common plate between the first and second vertical transistors; a first capacitor structure between the first vertical transistor and the common plate including a first lower electrode extending in the first direction, a first dielectric layer on the first lower electrode, and a first upper electrode on the first dielectric layer; and a second capacitor structure between the second vertical transistor and the common plate including a second lower electrode extending in the first direction, a second dielectric layer on the second lower electrode, and a second upper electrode on the second dielectric layer, wherein the first upper electrode is on a lower surface of the common plate, and the second upper electrode is on an upper surface of the common plate.