18594350. THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
Yukio Hayakawa of Suwon-si (KR)
THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18594350 titled 'THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE
The abstract describes a three-dimensional non-volatile memory device with horizontal word lines, pillar gate electrodes, and variable capacitors.
- The memory device includes a plurality of horizontal word lines spaced apart vertically.
- A pillar gate electrode is buried in a first channel hole passing through the horizontal word lines vertically.
- A first dielectric layer is between the pillar gate electrode and the horizontal word lines.
- Memory cells consist of the pillar gate electrode, first dielectric layer, and horizontal word lines with variable capacitors.
- The device also features a selection transistor and a storage transistor connected to the pillar gate electrode and horizontal word lines.
Potential Applications: - Data storage in electronic devices - Memory modules for computers and servers - Embedded memory in consumer electronics
Problems Solved: - Increased data storage capacity - Enhanced memory performance - Improved reliability of non-volatile memory
Benefits: - Higher memory density - Faster data access speeds - Extended lifespan of memory devices
Commercial Applications: Title: Three-Dimensional Non-Volatile Memory Device for Enhanced Data Storage This technology can be utilized in various commercial applications such as: - Solid-state drives - Smartphones and tablets - Wearable devices
Questions about Three-Dimensional Non-Volatile Memory Device: 1. How does the pillar gate electrode improve the performance of the memory device? The pillar gate electrode enhances the efficiency of data storage and retrieval processes by providing a stable electrical connection within the memory cells.
2. What are the advantages of using variable capacitors in the memory cells? Variable capacitors allow for dynamic storage of data, enabling flexible and efficient memory operations in the device.
Original Abstract Submitted
A three-dimensional non-volatile memory device includes a plurality of horizontal word lines spaced apart from each other in a vertical direction, a pillar gate electrode buried in a first channel hole that passes through the horizontal word lines in the vertical direction, and a first dielectric layer disposed between the pillar gate electrode and the horizontal word lines in a cross section. The pillar gate electrode, the first dielectric layer, and the horizontal word lines correspond to memory cells including a plurality of variable capacitors spaced apart from each other in a vertical direction. The memory device further includes a selection transistor on the pillar gate electrode and the horizontal word lines and connected to one end of the pillar gate electrode, and a storage transistor under the pillar gate electrode and the horizontal word lines and connected to another end of the pillar gate electrode.