18673308. CAPACITOR COMPRISING ANTI-FERROELECTRIC LAYERS AND HIGH-K DIELECTRIC LAYERS simplified abstract (SK hynix Inc.)
CAPACITOR COMPRISING ANTI-FERROELECTRIC LAYERS AND HIGH-K DIELECTRIC LAYERS
Organization Name
Inventor(s)
Se Hun Kang of Gyeonggi-do (KR)
CAPACITOR COMPRISING ANTI-FERROELECTRIC LAYERS AND HIGH-K DIELECTRIC LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18673308 titled 'CAPACITOR COMPRISING ANTI-FERROELECTRIC LAYERS AND HIGH-K DIELECTRIC LAYERS
Simplified Explanation
A semiconductor device with a multi-layer stack containing anti-ferroelectric and high-k dielectric layers is described in the patent application.
Key Features and Innovation
- Semiconductor device with a multi-layer stack
- Includes anti-ferroelectric and high-k dielectric layers
- Positioned between first and second electrodes
Potential Applications
The technology can be used in various electronic devices such as memory storage, sensors, and capacitors.
Problems Solved
The technology addresses the need for improved performance and efficiency in semiconductor devices.
Benefits
- Enhanced performance
- Increased efficiency
- Improved reliability
Commercial Applications
The technology can be applied in the semiconductor industry for the development of advanced electronic devices, leading to potential market growth and innovation.
Prior Art
Readers can explore prior research on anti-ferroelectric and high-k dielectric materials in semiconductor devices to understand the background of this technology.
Frequently Updated Research
Researchers are continuously studying the use of anti-ferroelectric and high-k dielectric layers in semiconductor devices to enhance their functionality and performance.
Questions about Semiconductor Device Technology
What are the potential applications of this semiconductor device technology?
The potential applications of this technology include memory storage, sensors, and capacitors in electronic devices.
How does the inclusion of anti-ferroelectric and high-k dielectric layers improve semiconductor device performance?
The inclusion of these layers enhances performance, efficiency, and reliability in semiconductor devices.
Original Abstract Submitted
A semiconductor device includes a first electrode, a second electrode, and a multi-layer stack positioned between the first electrode and the second electrode, the multi-layer stack including at least one anti-ferroelectric layer and at least one high-k dielectric layer.