18238028. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18238028 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
- An integrated circuit device includes a transistor on a substrate and a capacitor structure connected to the transistor. - The capacitor structure consists of a first electrode, a dielectric layer structure, and a second electrode. - The dielectric layer structure contains alternating layers of anti-ferroelectric material and HfZrO (ferroelectric material with varying x values). - The x value in the HfZrO layers changes gradually in a stack direction.
Potential Applications
- Memory devices - Sensor technology - High-frequency communication systems
Problems Solved
- Improved performance and reliability of integrated circuits - Enhanced data storage capabilities - Increased efficiency in electronic devices
Benefits
- Higher capacitance values - Reduced power consumption - Enhanced signal processing capabilities
Original Abstract Submitted
An integrated circuit device may include a transistor on a substrate, and a capacitor structure electrically connected to the transistor. The capacitor structure may include a first electrode, a dielectric layer structure on the first electrode, and a second electrode on the dielectric layer structure. The dielectric layer structure may include a plurality of first dielectric layers and a plurality of second dielectric layers which are alternately stacked. Each of the plurality of first dielectric layers may include an anti-ferroelectric material, and each of the plurality of second dielectric layers includes HfZrOin which 0<x<0.5, as a ferroelectric material. An x value may gradually change in a stack direction inside each of plurality of second dielectric layers.