Samsung electronics co., ltd. (20240315045). SEMICONDUCTOR MEMORY DEVICE simplified abstract
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240315045 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor device described in the abstract includes a substrate with impurity regions, word lines, bit lines, conductive patterns, partial electrodes, a dielectric layer, and a common electrode.
- The substrate contains a first impurity region and a second impurity region.
- A first word line is located in a region of the substrate with the first impurity region on one side and the second impurity region on the other side.
- A bit line is connected to the first impurity region, while a first conductive pattern is connected to the second impurity region.
- There are first and second partial electrodes on the first conductive pattern.
- A first dielectric layer is in contact with the upper surfaces of the first and second partial electrodes.
- A common electrode is situated on the first dielectric layer.
Potential Applications: - Memory storage devices - Integrated circuits - Semiconductor manufacturing
Problems Solved: - Efficient data storage and retrieval - Enhanced semiconductor device performance
Benefits: - Improved memory capacity - Faster data processing speeds - Higher efficiency in semiconductor devices
Commercial Applications: Title: Advanced Semiconductor Memory Devices for Enhanced Data Storage This technology can be utilized in the production of high-performance memory storage devices for various electronic applications, leading to faster and more efficient data processing.
Questions about the technology: 1. How does the configuration of impurity regions impact the performance of the semiconductor device? 2. What advantages does the use of partial electrodes and a common electrode provide in this technology?
Original Abstract Submitted
a semiconductor device may include a substrate including a first impurity region and a second impurity region; a first word line in a region of the substrate with the first impurity region on one side of the first word line and the second impurity region on an other side of the first word line; a bit line connected to the first impurity region; a first conductive pattern connected to the second impurity region; a first partial electrode and a second partial electrode on the first conductive pattern; a first dielectric layer in contact with an upper surface of the first partial electrode and an upper surface of the second partial electrode; and a common electrode on the first dielectric layer. an area of the upper surface of the first partial electrode may be different from an area of the upper surface of the second partial electrode.