METHOD FOR MANUFACTURING A TWO-TERMINAL MEMORY DEVICE

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METHOD FOR MANUFACTURING A TWO-TERMINAL MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240315047 titled 'METHOD FOR MANUFACTURING A TWO-TERMINAL MEMORY DEVICE

The abstract of the patent application describes a method for manufacturing a two-terminal memory device, involving the formation of various layers on a substrate.

Forming an extended drain and a drain layer on a substrate
Forming a ferroelectric layer covering the substrate and the extended drain
Forming a semiconducting layer on the ferroelectric layer
Forming a source layer connected to the semiconducting layer on the ferroelectric layer

Potential Applications: - Memory devices - Electronics industry - Data storage

Problems Solved: - Improving memory device technology - Enhancing data storage capabilities

Benefits: - Increased memory capacity - Improved data retention - Enhanced performance of memory devices

Commercial Applications: Title: "Innovative Two-Terminal Memory Device Manufacturing Method" This technology can be used in the production of memory devices for various electronic applications, potentially revolutionizing the data storage industry.

Questions about Two-Terminal Memory Device Manufacturing: 1. How does the formation of the ferroelectric layer impact the performance of the memory device? The ferroelectric layer plays a crucial role in enhancing the data retention capabilities of the memory device by providing a stable polarization state.

2. What are the advantages of using a two-terminal memory device over other types of memory technologies? Two-terminal memory devices offer a more compact and efficient solution for data storage, making them ideal for applications where space is limited.

Original Abstract Submitted

a method for manufacturing a two-terminal memory device includes: forming an extended drain and a drain layer on a substrate; forming a ferroelectric layer covering the substrate and the extended drain; forming a semiconducting layer on the ferroelectric layer, and forming a source layer connected to the semiconducting layer on the ferroelectric layer.