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Category:H01L29/10
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Pages in category "H01L29/10"
The following 200 pages are in this category, out of 469 total.
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- 17383423. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17383435. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461304. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17697400. VERTICAL CHANNEL TRANSISTOR simplified abstract (Samsung Electronics Co., Ltd.)
- 17703329. Transistor Gate Structures and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17712726. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17798347. METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, X-RAY DETECTOR, AND DISPLAY PANEL simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
- 17837150. UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17838894. CASCADED BIPOLAR JUNCTION TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17886145. SEMICONDUCTOR DEVICE HAVING MIXED CMOS ARCHITECTURE AND METHOD OF MANUFACTURING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17933568. VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract (QUALCOMM Incorporated)
- 17945467. SEMICONDUCTOR DEVICE WITH GATE STRUCTURE AND CURRENT SPREAD REGION simplified abstract (Infineon Technologies AG)
- 17948670. SYSTEMS AND METHODS FOR PILLAR EXTENSION IN TERMINATION AREAS OF WIDE BAND GAP SUPER-JUNCTION POWER DEVICES simplified abstract (GENERAL ELECTRIC COMPANY)
- 17963062. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17967200. TRANSISTOR INCLUDING TWO-DIMENSIONAL (2D) CHANNEL simplified abstract (Samsung Electronics Co., Ltd.)
- 17976955. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17977420. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 17984025. 3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18059402. HETEROSTRUCTURE TRANSISTOR GATE WITH DIFFUSION BARRIER simplified abstract (NXP USA, Inc.)
- 18064362. MULTI-PITCH PATTERNING THROUGH ONE-STEP FLOW simplified abstract (Intel Corporation)
- 18065663. LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER simplified abstract (International Business Machines Corporation)
- 18067168. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18072515. LDMOS DEVICE AND METHOD OF FABRICATION OF SAME simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18086303. PRODUCING STRESS IN NANOSHEET TRANSISTOR CHANNELS simplified abstract (International Business Machines Corporation)
- 18087318. ELONGATED CONTACT FOR SOURCE OR DRAIN REGION simplified abstract (Intel Corporation)
- 18087990. GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS simplified abstract (International Business Machines Corporation)
- 18089919. TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERS simplified abstract (Intel Corporation)
- 18091714. TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN CHANNEL DIMENSIONS simplified abstract (Intel Corporation)
- 18107516. HIGH-VOLTAGE TRANSISTOR, LEVEL-UP SHIFTING CIRCUIT, AND SEMICONDUCTOR DEVICE simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18108019. EDMOS AND FABRICATING METHOD OF THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18125512. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18151990. METHOD OF MAKING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18157054. METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18158148. DUAL SIDE CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18165624. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18166126. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18171090. SILICON SUPER JUNCTION STRUCTURES FOR INCREASED VOLTAGE simplified abstract (Applied Materials, Inc.)
- 18177245. SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18178522. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18182766. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18192683. POWER MOSFET AND MANUFACTURING METHOD THEREOF simplified abstract (United Microelectronics Corp.)
- 18196191. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18199014. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18216493. PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES OF VARYING WIDTH (Intel Corporation)
- 18231092. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18231261. SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME (United Microelectronics Corp.)
- 18237070. INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION, AND GATED LDD STRING DRIVER simplified abstract (Micron Technology, Inc.)
- 18237811. FINFET DEVICE STRUCTURE WITH EXTRA FIN (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18242844. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18242844. SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18255760. VERTICAL POWER TRANSISTOR simplified abstract (Robert Bosch GmbH)
- 18299663. INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18307620. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SK hynix Inc.)
- 18318587. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18334630. NOISE TRANSISTOR (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18335492. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS simplified abstract (Samsung Electronics Co., Ltd.)
- 18344398. IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18368630. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18370663. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18371113. Methods For Forming Gate Structures simplified abstract (Applied Materials, Inc.)
- 18375858. CHANNEL DEPOPULATION FOR FORKSHEET TRANSISTORS simplified abstract (Intel Corporation)
- 18383055. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (UNITED MICROELECTRONICS CORP.)
- 18405099. PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18411313. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18414404. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18421187. SEMICONDUCTOR MEMORY DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18423616. INTEGRATED CHIP AND METHOD OF FORMING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18431628. TRANSISTOR UNIT INCLUDING SHARED GATE STRUCTURE, AND SUB-WORD LINE DRIVER AND SEMICONDUCTOR DEVICE BASED ON THE SAME TRANSISTOR UNIT simplified abstract (Samsung Electronics Co., Ltd.)
- 18432084. SEMICONDUCTOR DEVICE simplified abstract (Rohm Co., Ltd.)
- 18432812. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18435938. SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18436052. SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18441094. SEMICONDUCTOR DEVICE (Mitsubishi Electric Corporation)
- 18442104. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18443253. RC-IGBT simplified abstract (Mitsubishi Electric Corporation)
- 18443297. SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR INCLUDING HORIZONTAL GATE STRUCTURE AND VERTICAL CHANNEL LAYER AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18449848. SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18449848. SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18450656. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18450656. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18456599. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18458489. TRANSISTOR DEVICE simplified abstract (Infineon Technologies AG)
- 18459172. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18459172. SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18459699. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (ROHM CO., LTD.)
- 18460171. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18460273. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18467739. TRANSISTOR STRUCTURE (UNITED MICROELECTRONICS CORP.)
- 18468556. Reduction of Edge Transistor Leakage on N-Type EDMOS and LDMOS Devices (Murata Manufacturing Co., Ltd.)
- 18476776. SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC EQUIPMENT simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
- 18479323. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18483413. SEMICONDUCTOR DEVICES INCLUDING GATE SPACER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18489028. SEMICONDUCTOR MODULE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18491470. METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES BY ETCHING ACTIVE FINS USING ETCHING MASKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18491802. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18492445. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18494384. DUAL GATE CONTROL FOR TRENCH SHAPED THIN FILM TRANSISTORS simplified abstract (Intel Corporation)
- 18496353. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18510402. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBON CHANNEL STRUCTURES simplified abstract (Intel Corporation)
- 18514338. MOSFET GATE FORMATION simplified abstract (NEXPERIA B.V.)
- 18514974. NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING simplified abstract (Intel Corporation)
- 18514995. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN ON INSULATOR SUBSTRATE simplified abstract (Intel Corporation)
- 18515148. SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516215. Gate Structures For Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516408. Fin Loss Prevention simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18517458. Contacts for Semiconductor Devices and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518004. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18518168. SELF-ALIGNED CHANNEL METAL OXIDE SEMICONDUCTOR (MOS) DEVICE AND FABRICATION METHOD THEREOF simplified abstract (Huawei Technologies Co., Ltd.)
- 18518566. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18518585. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18521014. SILICON CARBIDE SUBSTRATE, SILICON CARBIDE WAFER, AND SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
- 18521014. SILICON CARBIDE SUBSTRATE, SILICON CARBIDE WAFER, AND SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18521584. FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521975. SEMICONDUCTOR DEVICE AND FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522637. Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry simplified abstract (Micron Technology, Inc.)
- 18533354. TRENCH GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (DENSO CORPORATION)
- 18533354. TRENCH GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18535274. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18537651. FIELD-EFFECT TRANSISTORS WITH INTERLEAVED FINGER CONFIGURATION simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18539610. NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
- 18539610. NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18540524. COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE simplified abstract (Sony Group Corporation)
- 18540544. TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 18545730. Tunneling Enabled Feedback FET simplified abstract (IMEC VZW)
- 18568006. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (Sumitomo Electric Industries, Ltd.)
- 18581153. TRANSISTORS HAVING NANOSTRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18587506. METHOD FOR FORMING DIFFERENT TYPES OF DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18588727. SEMICONDUCTOR DEVICE WITH BACKSIDE SELF-ALIGNED POWER RAIL AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18589893. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18591923. GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18592204. SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)
- 18592204. SEMICONDUCTOR DEVICE (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18595511. SIGE HBT AND METHODS OF MANUFACTURING THE SAME simplified abstract (NXP B.V.)
- 18596461. SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS simplified abstract (Samsung Electronics Co., Ltd.)
- 18596641. SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHODS OF MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18597762. SYMMETRICAL 3D BIPOLAR NANOSHEET TRANSISTOR (Tokyo Electron Limited)
- 18597813. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18599374. FIELD EFFECT TRANSISTOR, PREPARATION METHOD THEREOF, AND ELECTRONIC CIRCUIT simplified abstract (Huawei Technologies Co., Ltd.)
- 18601094. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18605645. SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18608294. SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH simplified abstract (Intel Corporation)
- 18611143. WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM simplified abstract (ROHM CO., LTD.)
- 18612701. SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18615361. METHOD FOR FORMING A TIMING CIRCUIT ARRANGEMENTS FOR FLIP-FLOPS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18622142. EMBEDDED SEMICONDUCTOR REGION FOR A LATCH-UP SUSCEPTIBILITY IMPROVEMENT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18623285. Gate-All-Around Device with Protective Dielectric Layer and Method of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18623956. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED DATA LINE STRUCTURE simplified abstract (Micron Technology, Inc.)
- 18624967. NON-VOLATILE MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18625798. SEMICONDUCTOR DEVICE WITH DOPED REGION BETWEEN GATE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18638120. Semiconductor Devices Having Funnel-Shaped Gate Structures simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18644874. STATIC RANDOM-ACCESS MEMORY (SRAM) BIT CELL WITH CHANNEL DEPOPULATION simplified abstract (Intel Corporation)
- 18648180. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
- 18652013. SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME simplified abstract (ROHM Co., LTD.)
- 18653339. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18665569. SEMICONDUCTOR DEVICE INCLUDING AN IGBT WITH REDUCED VARIATION IN THRESHOLD VOLTAGE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18666835. SEMICONDUCTOR DEVICE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18667032. TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18668085. LATERALLY DIFFUSED MOSFET AND METHOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18668333. BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18669156. RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE simplified abstract (ATOMERA INCORPORATED)
- 18669766. SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (DENSO CORPORATION)
- 18671151. SEMICONDUCTOR STRUCTURE HAVING DIELECTRIC STRUCTURE EXTENDING INTO SECOND CAVITY OF SEMICONDUCTOR FIN simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18671941. WORK FUNCTION METAL GATE DEVICE simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18744888. THIN-SHEET FINFET DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18745323. SEMICONDUCTOR DEVICE ACTIVE REGION PROFILE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18746063. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (United Microelectronics Corp.)
- 18746181. Contact for Semiconductor Device and Method of Forming Thereof simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18747151. Dual Side Contact Structures in Semiconductor Devices simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18747616. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18753567. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18756609. PLANAR AND NON-PLANAR FET-BASED ELECTROSTATIC DISCHARGE PROTECTION DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18817672. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18818617. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE (FUJI ELECTRIC CO., LTD.)
- 18824195. MULTI-THRESHOLD VOLTAGE INTEGRATION SCHEME FOR COMPLEMENTARY FIELD-EFFECT TRANSISTORS (Applied Materials, Inc.)
- 18824976. BIPOLAR TRANSISTOR AND METHOD OF MAKING A BIPOLAR TRANSISTOR (NXP B.V.)
- 18891861. Low Leakage FET (Murata Manufacturing Co., Ltd.)
- 18895404. NITRIDE SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18895430. SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18895465. SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18905330. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (Semiconductor Energy Laboratory Co., Ltd.)
- 18940988. SEMICONDUCTOR STRUCTURE (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18955936. SEMICONDUCTOR DEVICES, SEMICONDUCTOR STRUCTURES AND METHODS FOR FABRICATING A SEMICONDUCTOR STRUCTURE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18956113. FIN FIELD EFFECT TRANSISTOR DEVICE STRUCTURE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18962363. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18966496. Elevationally-Extending Transistors, Devices Comprising Elevationally-Extending Transistors, and Methods of Forming a Device Comprising Elevationally-Extending Transistors (Micron Technology, Inc.)
- 18967403. Transistor Gates and Method of Forming (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18970414. SILICON CARBIDE SEMICONDUCTOR DEVICE (FUJI ELECTRIC CO., LTD.)
2
- 20240014261. REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES simplified abstract (SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC)
- 20240014270. INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (FUJI ELECTRIC CO., LTD.)
- 20240014317. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 20240021674. TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 20240021678. PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIER REGIONS simplified abstract (MACOM Technology Solutions Holdings, Inc.)
- 20240030347. TRANSISTOR STRUCTURE WITH METAL INTERCONNECTION DIRECTLY CONNECTING GATE AND DRAIN/SOURCE REGIONS simplified abstract (ETRON TECHNOLOGY, INC.)
- 20240032269. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240038583. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 20240038873. SEMICONDUCTOR DEVICES INCLUDING GATE SPACER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
A
- Applied materials, inc. (20240258375). SILICON CARBIDE TRANSISTOR WITH CHANNEL COUNTER-DOPING AND POCKET-DOPING simplified abstract
- Applied materials, inc. (20240282809). SILICON SUPER JUNCTION STRUCTURES FOR INCREASED VOLTAGE simplified abstract
- Applied materials, inc. (20240304671). Methods For Forming Gate Structures simplified abstract
- Applied materials, inc. (20250089355). MULTI-THRESHOLD VOLTAGE INTEGRATION SCHEME FOR COMPLEMENTARY FIELD-EFFECT TRANSISTORS
