18643087. SEMICONDUCTOR DEVICE INCLUDING VERTICAL CHANNEL HAVING TUBE SHAPE (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE INCLUDING VERTICAL CHANNEL HAVING TUBE SHAPE
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SEMICONDUCTOR DEVICE INCLUDING VERTICAL CHANNEL HAVING TUBE SHAPE
This abstract first appeared for US patent application 18643087 titled 'SEMICONDUCTOR DEVICE INCLUDING VERTICAL CHANNEL HAVING TUBE SHAPE
Original Abstract Submitted
A semiconductor device may include a substrate, a vertical channel, a gate electrode, and a conductive layer. The vertical channel may have a tube shape extending in a direction perpendicular to a surface of the substrate. The gate electrode may face the vertical channel with an outer insulating layer therebetween on an outer circumferential surface of the vertical channel. The conductive layer may face the vertical channel with an inner insulating layer therebetween on an inner circumferential surface of the vertical channel.