18237811. FINFET DEVICE STRUCTURE WITH EXTRA FIN (Taiwan Semiconductor Manufacturing Company, LTD.)
FINFET DEVICE STRUCTURE WITH EXTRA FIN
Organization Name
Taiwan Semiconductor Manufacturing Company, LTD.
Inventor(s)
Hui-Hsuan Kung of Taichung (TW)
Chih-Hsiao Chen of Taichung (TW)
FINFET DEVICE STRUCTURE WITH EXTRA FIN
This abstract first appeared for US patent application 18237811 titled 'FINFET DEVICE STRUCTURE WITH EXTRA FIN
Original Abstract Submitted
Embodiments of the present disclosure provide a FinFET semiconductor including a first set of fin structures that are active, a source/drain (S/D) region in contact with the first set of fin structures, a second set of fin structures separated, via a shallow trench isolation (STI) feature, from the first set of fin structures, a contact etch stop layer (CESL) over the S/D region and over the second set of fin structures, and a gate over the first set of fin structures and over the second set of fin structures, the gate including a gate dielectric and a gate electrode over the gate dielectric. The second set of fin structures includes one or more non-active fin structures that are in contact with the CESL without being in contact with the S/D region.