MULTI-PITCH PATTERNING THROUGH ONE-STEP FLOW

Organization Name

Intel Corporation

Inventor(s)

Bharath Bangalore Rajeeva of Hillsboro OR (US)

Manish Chandhok of Beaverton OR (US)

Gurpreet Singh of Portland OR (US)

Kevin Huggins of Beaverton OR (US)

Eungnak Han of Portland OR (US)

Florian Gstrein of Portland OR (US)

Marko Radosavljevic of Portland OR (US)

MULTI-PITCH PATTERNING THROUGH ONE-STEP FLOW - A simplified explanation of the abstract

This abstract first appeared for US patent application 18064362 titled 'MULTI-PITCH PATTERNING THROUGH ONE-STEP FLOW

Simplified Explanation

An IC device includes two conductive structures in different sections, with one structure being larger in one direction than the other. These structures are connected to transistor channel regions and covered by dielectric materials.

The IC device has two parallel conductive structures in different sections.
One conductive structure is larger in one direction compared to the other.
Each conductive structure is connected to a transistor channel region.
Dielectric materials cover the conductive structures.

Key Features and Innovation

Parallel arrangement of two conductive structures.
Size asymmetry between the two structures.
Connection of the structures to transistor channel regions.
Dielectric material coverage for protection.

Potential Applications

The technology can be applied in:

Integrated circuits
Semiconductor devices
Transistor manufacturing

Problems Solved

Enhanced performance of transistors
Improved reliability of IC devices
Efficient use of space in semiconductor designs

Benefits

Increased functionality of integrated circuits
Higher durability of semiconductor components
Optimal utilization of transistor channels

Commercial Applications

Title: Advanced Semiconductor Technology for Enhanced IC Performance This innovation can revolutionize the semiconductor industry by improving the efficiency and reliability of integrated circuits. It has the potential to be widely adopted in various electronic devices, leading to advancements in technology.

Prior Art

Further research can be conducted in the field of semiconductor manufacturing processes, specifically focusing on the design and layout of transistor components.

Frequently Updated Research

Stay updated on the latest advancements in semiconductor technology and integrated circuit design to explore new possibilities for enhancing IC performance.

Questions about Semiconductor Technology

What are the key advantages of using asymmetrical conductive structures in IC devices?

Asymmetrical conductive structures offer improved performance and efficiency in transistor operation, leading to enhanced functionality of integrated circuits.

How does the connection of conductive structures to transistor channel regions impact overall IC performance?

The connection ensures a direct and efficient flow of electrical signals, optimizing the functionality and reliability of the integrated circuit.

Original Abstract Submitted

An IC device may include a first conductive structure in a first section and a second conductive structure in a second section. The second conductive structure is in parallel with the first conductive structure in a first direction. A dimension of the second conductive structure in a second direction perpendicular to the first direction is greater than a dimension of the first conductive structure in the second direction. The first conductive structure may be coupled to a channel region of a transistor. The second conductive structure may be coupled to a channel region of another transistor. A first structure comprising a first dielectric material may be over the first conductive structure. A second structure comprising a second dielectric material may be over the second section. A third structure comprising the first dielectric material may be over the second conductive structure and be at least partially surrounded by the second structure.