18496697. INTEGRATED CIRCUIT (IC) WITH CORRUGATED CHANNEL STRUCTURE (TEXAS INSTRUMENTS INCORPORATED)
INTEGRATED CIRCUIT (IC) WITH CORRUGATED CHANNEL STRUCTURE
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Jackson Bauer of Rowlett TX US
Sheldon Douglas Haynie of Dallas TX US
INTEGRATED CIRCUIT (IC) WITH CORRUGATED CHANNEL STRUCTURE
This abstract first appeared for US patent application 18496697 titled 'INTEGRATED CIRCUIT (IC) WITH CORRUGATED CHANNEL STRUCTURE
Original Abstract Submitted
An integrated circuit (IC) device including one or more corrugated channel structures formed in a top portion of a semiconductor substrate, where a corrugated channel structure includes a first sidewall, a second sidewall and an upper portion. In an example, the corrugated channel structure is provided with a substantially uniform distribution profile of a dopant across a horizontal plane from the first sidewall to the second sidewall.
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