SEMICONDUCTOR DEVICE

Organization Name

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor(s)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18450656 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation: The semiconductor device described in the abstract consists of a silicon carbide layer with different conductivity regions and a gate electrode.

The device includes a first silicon carbide region of a first conductivity type, a second silicon carbide region of a second conductivity type, and a third silicon carbide region of the first conductivity type.
The first silicon carbide region is composed of a first region, second regions, and third regions, with varying impurity concentrations.
The second and third regions are positioned between the first region and the second silicon carbide region, with alternating impurity concentrations.

Key Features and Innovation:

Utilizes a silicon carbide layer with different conductivity regions for enhanced performance.
Gate electrode for controlling the flow of current through the device.
Specific arrangement of silicon carbide regions with varying impurity concentrations for optimized functionality.

Potential Applications:

Power electronics
High-temperature applications
Electric vehicles
Renewable energy systems

Problems Solved:

Improved efficiency in power electronics
Enhanced performance in high-temperature environments
Increased reliability in electric vehicle components

Benefits:

Higher efficiency
Greater reliability
Improved performance in extreme conditions

Commercial Applications: The technology can be applied in various industries such as power electronics, electric vehicles, and renewable energy systems, offering enhanced performance and reliability in demanding environments.

Questions about Silicon Carbide Semiconductor Device: 1. How does the arrangement of different conductivity regions in the silicon carbide layer impact the device's performance? 2. What are the specific advantages of using silicon carbide in semiconductor devices compared to other materials?

Original Abstract Submitted

A semiconductor device according to an embodiment includes a silicon carbide layer having a first face and a second face; a first silicon carbide region of a first conductivity type; a second silicon carbide region of a second conductivity type; a third silicon carbide region of the first conductivity type in the silicon carbide layer in this order in a direction from the second face to the first face; and a gate electrode. The first silicon carbide region includes a first region, second regions, and third regions. The second regions and the third regions are provided between the first region and the second silicon carbide region. The second regions and the third regions are alternately provided in a first direction parallel to the first face, and the first conductivity type impurity concentration of the second regions is higher than those of the first region and the third regions.