18307620. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SK hynix Inc.)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Wan Sup Shin of Icheon-si Gyeonggi-do (KR)
Yoon Ho Kang of Icheon-si Gyeonggi-do (KR)
Ji Seong Kim of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18307620 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a gate structure with insulating and conductive layers, a channel layer, a silicide layer, and a memory layer, with at least one of these layers containing a halogen element.
- The semiconductor device features a gate structure composed of alternating insulating and conductive layers.
- A channel layer is situated within the gate structure.
- A silicide layer is present within the channel layer.
- A memory layer surrounds the channel layer.
- One or more of the channel layer, silicide layer, and memory layer contain a halogen element.
Potential Applications
The technology described in this patent application could be applied in:
- Advanced memory devices
- High-performance computing systems
- Semiconductor manufacturing industry
Problems Solved
This technology addresses issues related to:
- Enhancing the performance and efficiency of semiconductor devices
- Improving memory storage capabilities
- Increasing the speed and reliability of electronic devices
Benefits
The benefits of this technology include:
- Higher processing speeds
- Increased memory capacity
- Improved overall performance of electronic devices
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Data storage devices
- Telecommunications equipment
Possible Prior Art
One possible prior art example could be the use of halogen elements in semiconductor devices for improved performance and functionality.
Unanswered Questions
How does the integration of halogen elements impact the overall power consumption of the semiconductor device?
The article does not delve into the specific effects of halogen elements on power consumption.
Are there any potential environmental concerns associated with the use of halogen elements in semiconductor devices?
The potential environmental impact of incorporating halogen elements is not discussed in the article.
Original Abstract Submitted
A semiconductor device includes a gate structure including insulating layers and conductive layers that are alternately stacked, a channel layer located in the gate structure, a silicide layer located in the channel layer, and a memory layer surrounding the channel layer. At least one of the channel layer, the silicide layer, and the memory layer includes a halogen element.
