18897189. SEMICONDUCTOR DEVICE INCLUDING NOBLE METAL TWO-DIMENSIONAL MATERIAL (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE INCLUDING NOBLE METAL TWO-DIMENSIONAL MATERIAL
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SEMICONDUCTOR DEVICE INCLUDING NOBLE METAL TWO-DIMENSIONAL MATERIAL
This abstract first appeared for US patent application 18897189 titled 'SEMICONDUCTOR DEVICE INCLUDING NOBLE METAL TWO-DIMENSIONAL MATERIAL
Original Abstract Submitted
A semiconductor device may include a channel layer including a channel region, a source region, and a drain region, the source region and the drain region being on both sides of the channel region, respectively; a source electrode connected to the source region, a drain electrode connected to the drain region, and a gate electrode on the channel region. The channel region may include a first two-dimensional material layer including a noble metal-based two-dimensional semiconductor material and a second two-dimensional material layer including a two-dimensional semiconductor material different from the first two-dimensional material layer.