18612701. SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Miao-Syuan Fan of Hsinchu (TW)
Ching-Hua Lee of Hsinchu City (TW)
SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18612701 titled 'SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE
The present disclosure pertains to a semiconductor device with source/drain regions doped with lead (Pb) at different concentrations, along with a channel region and S/D contacts.
- Source/drain regions doped with lead (Pb) at different concentrations
- Channel region between the S/D regions with lower Pb dopant concentration
- S/D contacts in contact with the S/D regions
- Gate electrode over the channel region
Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the manufacturing of high-performance transistors and integrated circuits.
Problems Solved: - Provides a method to control the dopant concentration in different regions of a semiconductor device. - Offers a solution for optimizing the performance of transistors by adjusting the dopant concentration.
Benefits: - Enhanced performance and efficiency of semiconductor devices. - Improved control over the electrical properties of transistors.
Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology could have significant commercial implications in the semiconductor industry, particularly in the development of cutting-edge electronic devices.
Questions about Semiconductor Devices with Lead Doping: 1. How does the lead (Pb) dopant concentration affect the performance of the semiconductor device?
- The lead dopant concentration plays a crucial role in determining the electrical properties and overall efficiency of the device.
2. What are the potential challenges associated with integrating lead-doped regions in semiconductor devices?
- Some challenges may include ensuring uniform doping distribution and minimizing dopant diffusion during fabrication processes.
Original Abstract Submitted
The present disclosure relates to a semiconductor device includes first and second source/drain (S/D) regions doped with lead (Pb) at a first dopant concentration. The semiconductor device also includes a channel region between the first and second S/D regions, where the channel region is doped with Pb at a second dopant concentration that is lower than the first dopant concentration. The semiconductor device further includes first and second S/D contacts in contact with the first and second S/D regions, respectively. The semiconductor device also includes a gate electrode over the channel region.