18666120. SEMICONDUCTOR DEVICES (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICES
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SEMICONDUCTOR DEVICES
This abstract first appeared for US patent application 18666120 titled 'SEMICONDUCTOR DEVICES
Original Abstract Submitted
A semiconductor device includes a substrate; an active pattern on the substrate; a plurality of channel layers stacked on the active pattern to be spaced apart from each other; a gate structure surrounding the plurality of channel layers; source/drain patterns including a first epitaxial layer disposed along side surfaces of the plurality of channel layers on a portion of the active pattern and a second epitaxial layer disposed on the first epitaxial layer and having a trench; contact structures disposed on the source/drain patterns, respectively, and including a first extension portion filling the trench, and a pair of second extension portions extending along both side surfaces of the source/drain patterns in the second direction, respectively; and a metal-semiconductor compound layer disposed between the source/drain patterns and the contact structures.