18905487. METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR (STMicroelectronics International N.V.)
METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR
Organization Name
STMicroelectronics International N.V.
Inventor(s)
Arnaud Rival of Saint Nazaire les Eymes FR
Edoardo Brezza of Casale Monferrato IT
Pascal Chevalier of Chapareillan FR
METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR
This abstract first appeared for US patent application 18905487 titled 'METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR
Original Abstract Submitted
A method of making a bipolar transistor includes: forming a first collector part of a first conductivity type in a semiconductor layer; forming a first insulating region made of a first insulating material on the first collector part; forming a conduction layer intended to form a first doped base part of the second conductivity type on the first insulating region; forming an opening having a first width in the conduction layer that emerges onto the first insulating region; forming an insulating layer on the conduction layer and in the opening; forming a cavity in the insulating layer and in the first insulating region that emerges onto a portion of the first collector part through the opening, the cavity having at the level of the opening a second width smaller than the first width; and forming a second collector part in the cavity on the portion of the first collector part.