18592204. SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hiroki Nemoto of Fuchu Tokyo JP
Tsuyoshi Kachi of Kanazawa Ishikawa JP
Hiroaki Katou of Nonoichi Ishikawa JP
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18592204 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
A semiconductor device includes a semiconductor layer having first and second surfaces and including a first semiconductor region of a first type, first and second electrodes, a first insulation region, a first conductive portion electrically connected to the first electrode, a second insulation region, a first control electrode in the second insulation region, a second semiconductor region of the first type between the first and second insulation regions, a second conductive portion adjacent to the second semiconductor region and forming a Schottky junction with the second semiconductor region, a third semiconductor region of a second type on the first semiconductor region, and a fourth semiconductor region of the first type between the third semiconductor region and the first electrode. The third and fourth semiconductor regions are electrically connected to the first electrode.