18671941. WORK FUNCTION METAL GATE DEVICE simplified abstract (UNITED MICROELECTRONICS CORP.)
WORK FUNCTION METAL GATE DEVICE
Organization Name
Inventor(s)
Chih-Wen Huang of Tainan City (TW)
Shih-An Huang of Tainan City (TW)
WORK FUNCTION METAL GATE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18671941 titled 'WORK FUNCTION METAL GATE DEVICE
The abstract describes a work function metal gate device with a unique gate structure and isolation features.
- The device includes a gate with a convex or concave stair-shaped work function metal stack on a substrate.
- A drift region is located below a part of the gate in the substrate.
- The source and drain are positioned in the substrate and drift region, respectively, beside the gate.
- A first isolation structure is placed in the drift region between the gate and the drain.
Potential Applications: - This technology can be used in semiconductor devices for improved performance and efficiency. - It can be applied in integrated circuits for advanced electronic systems.
Problems Solved: - Enhances the functionality and reliability of work function metal gate devices. - Provides better isolation and control of current flow in semiconductor components.
Benefits: - Increased efficiency and performance in electronic devices. - Improved reliability and stability of semiconductor systems.
Commercial Applications: - This technology can be utilized in the manufacturing of high-performance electronic devices. - It has potential applications in the semiconductor industry for next-generation products.
Prior Art: - Researchers can explore prior patents related to work function metal gate devices for further insights into the development of this technology.
Frequently Updated Research: - Stay updated on advancements in work function metal gate devices and their applications in the semiconductor industry.
Questions about Work Function Metal Gate Devices: 1. What are the key advantages of using a convex or concave stair-shaped work function metal stack in gate structures? 2. How does the first isolation structure in the drift region improve the performance of the device?
Original Abstract Submitted
A work function metal gate device includes a gate, a drift region, a source, a drain and a first isolation structure. The gate includes a convex stair-shaped work function metal stack or a concave stair-shaped work function metal stack disposed on a substrate. The drift region is disposed in the substrate below a part of the gate. The source is located in the substrate and the drain is located in the drift region beside the gate. The first isolation structure is disposed in the drift region between the gate and the drain.