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Category:Tatsuya Tominari of Plano TX US

From WikiPatents

Tatsuya Tominari

Tatsuya Tominari from Plano TX US has applied for patents in technology areas such as H01L29/66, H01L21/02, H01L21/3065 with texas instruments incorporated.

Patents

METHOD TO SUPPRESS BASE POLY LINKUP OVERGROWTH INTO THE EMITTER CAVITY DURING SILICON GERMANIUM SELECTIVE EPITAXY GROWTH (20250142851)

Pages in category "Tatsuya Tominari of Plano TX US"

The following 4 pages are in this category, out of 4 total.

1

18499153. METHOD TO SUPPRESS BASE POLY LINKUP OVERGROWTH INTO THE EMITTER CAVITY DURING SILICON GERMANIUM SELECTIVE EPITAXY GROWTH (TEXAS INSTRUMENTS INCORPORATED)

2

T

Texas instruments incorporated (20250142851). METHOD TO SUPPRESS BASE POLY LINKUP OVERGROWTH INTO THE EMITTER CAVITY DURING SILICON GERMANIUM SELECTIVE EPITAXY GROWTH

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