18817672. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
Shunpei Yamazaki of Setagaya (JP)
Hiroyuki Miyake of Atsugi (JP)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 18817672 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.